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MGBR10L50L-T27-R

Description
MOS GATED BARRIER RECTIFIER
CategoryDiscrete semiconductor    diode   
File Size136KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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MGBR10L50L-T27-R Overview

MOS GATED BARRIER RECTIFIER

MGBR10L50L-T27-R Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.6 V
JEDEC-95 codeTO-277
JESD-30 codeR-PDSO-F3
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage50 V
Maximum reverse current300 µA
surface mountYES
Terminal formFLAT
Terminal locationDUAL
UNISONIC TECHNOLOGIES CO., LTD
MGBR10L50
MOS GATED BARRIER
RECTIFIER
DESCRIPTION
The UTC
MGBR10L50
is a surface mount mos gated barrier
rectifier, it uses UTC’s advanced technology to provide customers
with low forward voltage drop and high current capability, etc.
The UTC
MGBR10L50
suitable for free wheeling, high frequency
inverters, polarity protection, and low voltage.
Preliminary
DIODE
FEATURES
* Low forward voltage drop
* High current capability
* High surge capability
* High efficiency
SYMBOL
TO-220-2
TO-277
ORDERING INFORMATION
Package
TO-220-2
TO-277
Pin Assignment
1
2
3
A
K
-
A
K
A
Packing
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
MGBR10L50L-TA2-T
MGBR10L50G-TA2-T
MGBR10L50L-T27-R
MGBR10L50G-T27-R
Note: Pin Assignment: A: Anode, K: Cathode
MARKING INFORMATION
PACKAGE
MARKING
TO-220-2
TO-277
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R601-215.c

MGBR10L50L-T27-R Related Products

MGBR10L50L-T27-R MGBR10L50G-TA2-T MGBR10L50 MGBR10L50G-T27-R MGBR10L50L-TA2-T
Description MOS GATED BARRIER RECTIFIER MOS GATED BARRIER RECTIFIER MOS GATED BARRIER RECTIFIER MOS GATED BARRIER RECTIFIER MOS GATED BARRIER RECTIFIER
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Reach Compliance Code compli compli - compli compli
ECCN code EAR99 EAR99 - EAR99 EAR99
Other features FREE WHEELING DIODE FREE WHEELING DIODE - FREE WHEELING DIODE FREE WHEELING DIODE
application EFFICIENCY EFFICIENCY - EFFICIENCY EFFICIENCY
Configuration SINGLE SINGLE - SINGLE SINGLE
Diode component materials SILICON SILICON - SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.6 V 0.6 V - 0.6 V 0.6 V
JEDEC-95 code TO-277 TO-220AC - TO-277 TO-220AC
JESD-30 code R-PDSO-F3 R-PSFM-T2 - R-PDSO-F3 R-PSFM-T2
Maximum non-repetitive peak forward current 150 A 150 A - 150 A 150 A
Number of components 1 1 - 1 1
Phase 1 1 - 1 1
Number of terminals 3 2 - 3 2
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C - -65 °C -65 °C
Maximum output current 10 A 10 A - 10 A 10 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT - SMALL OUTLINE FLANGE MOUNT
Maximum repetitive peak reverse voltage 50 V 50 V - 50 V 50 V
Maximum reverse current 300 µA 300 µA - 300 µA 300 µA
surface mount YES NO - YES NO
Terminal form FLAT THROUGH-HOLE - FLAT THROUGH-HOLE
Terminal location DUAL SINGLE - DUAL SINGLE
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