CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C125FP
Issued Date : 2015.12.23
Revised Date :
Page No. : 1/10
MTN9N60BFP
Description
BV
DSS
I
D @
V
GS
=10V, T
C
=25°C
R
DSON(TYP) @
V
GS
=10V, I
D
=4.5A
600V
8.5A
0.79Ω
The MTN9N60BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
Insulating package, front/back side insulating voltage=2500V(AC)
•
RoHS compliant package
Features
Applications
•
Switching Mode Power Supply
•
LCD Panel Power
•
Adapter
•
E-bike Charger
Ordering Information
Device
MTN9N60BFP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN9N60BFP
CYStek Product Specification
CYStech Electronics Corp.
Symbol
MTN9N60BFP
Spec. No. : C125FP
Issued Date : 2015.12.23
Revised Date :
Page No. : 2/10
Outline
TO-220FP
G：Gate
D：Drain
S：Source
G D S
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
GS
=10V, T
C
=25°C
Continuous Drain Current @ V
GS
=10V, T
C
=100°C
Pulsed Drain Current @ V
GS
=10V
(Note 1)
Single Pulse Avalanche Current
(Note 2)
Single Pulse Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Note : 1
.
Pulse width limited by maximum junction temperature.
2
.
I
AS
=8.5A, V
DD
=50V, L=7mH, V
G
=10V, starting T
J
=+25
℃
.
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
E
AR
T
L
T
PKG
P
D
Tj, Tstg
600
±30
8.5*
5.4*
34*
8.5
252
5
300
260
50
0.4
-55~+150
V
A
mJ
°C
W
W/°C
°C
MTN9N60BFP
CYStek Product Specification
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Spec. No. : C125FP
Issued Date : 2015.12.23
Revised Date :
Page No. : 3/10
Value
2.5
62.5
Unit
°C/W
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
Min.
600
-
2.0
-
-
-
-
-
Typ.
-
0.9
-
9.7
-
-
-
0.79
34.5
5.4
17.1
14
14.8
49
15.2
943
117
27
-
-
-
408
2.8
Max.
-
-
4.0
-
±
100
1
10
1.2
-
-
-
-
-
-
-
-
-
-
1.5
8.5
34
-
-
Unit
V
V/°C
V
S
nA
μA
Ω
Test Conditions
V
GS
=0V, I
D
=250μA, Tj=25
℃
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=15V, I
D
=4.5A
V
GS
=
±
30V
V
DS
=600V, V
GS
=0V
V
DS
=480V, V
GS
=0V, Tj=125°C
V
GS
=10V, I
D
=4.5A
*R
DS(ON)
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*V
SD
-
*I
S
-
*I
SM
-
*trr
-
*Qrr
-
nC
I
D
=8.5A, V
DD
=300V, V
GS
=10V
V
DD
=300V, I
D
=8.5A, V
GS
=10V,
R
G
=2.7
Ω
ns
pF
V
GS
=0V, V
DS
=25V, f=1MHz
V
A
ns
μC
I
S
=8.5A, V
GS
=0V
V
GS
=0V, I
F
=8.5A, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTN9N60BFP
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
20
18
16
I
D
, Drain Current(A)
R
DS(ON)
, Normalized Static Drain-Source
On-state Resistance
10V,9V,8V,7V
6V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
10
20
30
V
DS
, Drain-Source Voltage(V)
40
50
-75
-50
-25
Spec. No. : C125FP
Issued Date : 2015.12.23
Revised Date :
Page No. : 4/10
Static Drain-Source On-resistance vs Ambient Temperature
14
12
10
8
6
4
2
0
5
V
V
GS
=4.5V
I
D
=4.5A,
V
GS
=10V
0
25 50 75 100 125 150 175
T
A
,
Ambient Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Drain Current vs Gate-Source Voltage
1200
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
1000
800
600
400
200
0
0.01
0.1
1
I
D
, Drain Current(A)
10
V
GS
=10V
24
20
I
D
, Drain Current(A)
16
12
8
4
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
V
DS
=10V
Ta=25°C
V
DS
=30V
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2000
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
1800
100
Forward Drain Current vs Source-Drain Voltage
1400
1200
1000
800
600
400
200
0
0
2
4
6
8
10
I
D
=4.5A
Ta=25°C
I
F
, Forward Current(A)
1600
10
V
GS
=0V
1
Ta=150°C
0.1
Ta=25°C
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
GS
, Gate-Source Voltage(V)
V
SD
, Source Drain Voltage(V)
MTN9N60BFP
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
10000
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
1.4
Spec. No. : C125FP
Issued Date : 2015.12.23
Revised Date :
Page No. : 5/10
Brekdown Voltage vs Ambient Temperature
Ciss
1.2
Capacitance(pF)
1000
1.0
Coss
100
0.8
I
D
=250μA,
V
GS
=0V
0.6
-75
-50
-25
0
25 50 75 100 125 150 175
T
A
,
Ambient Temperature(°C)
f=1MHz
10
Crss
0
5
10
15
20
25
V
DS
, Drain-to-Source Voltage(V)
30
Maximum Safe Operating Area
100
R
DS(ON)
Limited
100
μs
1ms
10ms
100ms
DC
10
μs
Gate Charge Characteristics
10
V
DS
=120V
8
V
GS
, Gate-Source Voltage(V)
I
D
, Drain Current(A)
10
V
DS
=300V
6
4
V
DS
=480V
1
0.1
T
C
=25°C, Tj(max)=150°C
V
GS
=10V, R
θJC
=2.5°C/W
Single pulse
1
10
100
1000
2
I
D
=8.5A
0
0
5
10
15
20
25
30
35
40
0.01
V
DS
, Drain-Source Voltage(V)
Maximum Drain Current vs Case Temperature
Qg, Total Gate Charge(nC)
Threshold Voltage vs Junction Tempearture
8
I
D
, Maximum Drain Current(A)
V
GS(th)
, Normalized Threshold Voltage
9
1.4
1.2
I
D
=1mA
7
6
5
4
3
2
1
0
25
50
75
100
125
150
175
T
C
, Case Temperature(°C)
V
GS
=10V, R
θJC
=2.5°C/W
1
0.8
0.6
0.4
0.2
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
I
D
=250μA
MTN9N60BFP
CYStek Product Specification
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