INCHANGE
Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
2SB1031
DESCRIPTION
·High
DC Current Gain-
: h
FE
= 1000(Min)@ I
C
= -
8A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= -100V(Min)
·Complement
to Type 2SD1435
APPLICATIONS
·Designed
for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-100
-100
-7
-15
-20
-3
100
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
isc website
：
www.iscsemi.cn
1
isc & iscsemi
is registered trademark
INCHANGE
Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
(BR)CEO
V
(BR)EBO
V
CE
(sat)
-1
V
CE
(sat)
-2
V
BE
(sat)-1
V
BE
(sat)-2
I
CBO
I
CEO
h
FE
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff current
Collector Cutoff current
DC Current Gain
CONDITIONS
I
C
= -30mA, R
BE
=
∞
I
C
= -1mA, R
BE
=
∞
I
E
= -5mA , I
C
= 0
I
C
= -8A ,I
B
= -16mA
I
C
= -15A ,I
B
= -150mA
I
C
= -8A ,I
B
= -16mA
I
C
= -15A ,I
B
= -150mA
V
CB
= -100V, I
E
= 0
V
CE
= -80V, R
BE
=
∞
I
C
= -8A ; V
CE
= -3V
1000
MIN
-100
-100
-7
TYP.
2SB1031
MAX
UNIT
V
V
V
-2.0
-3.0
-2.5
-3.5
-0.1
-1.0
20000
V
V
V
V
mA
mA
Switching Times
t
on
t
stg
Turn-on Time
I
C
= -8A,
I
B1
= -I
B2
= -16mA;
Storage Time
8
2
μ s
μ s
isc website
：
www.iscsemi.cn
2
isc & iscsemi
is registered trademark
京公网安备 11010802033920号
EEWORLD
