BD635 datasheet, PDF - EEWORLD Datasheet

BD635: DescriptionPower Bipolar Transistor, 2A I(C), NPN; CategoryDiscrete semiconductor The transistor; File Size721KB，8 Pages; ManufacturerSemiconductors Inc.

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BD635 Overview

Power Bipolar Transistor, 2A I(C), NPN

Parameter Name	Attribute value
Maker	Semiconductors Inc.
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	2 A
Configuration	Single
Minimum DC current gain (hFE)	25
Maximum operating temperature	140 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	2 W
surface mount	NO

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