INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC4977
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 400V(Min)
·Fast
Switching Speed
·Collector-Emitter
Saturation Voltage-
: V
CE(sat)
= 0.8V(Max.)@ I
C
= 4.0A
APPLICATIONS
·Designed
for use in high-voltage, high-speed , power
switching in inductive circuit , they are particularly suited
for 115 and 220V switchmode applications such as swit-
ching regulator’s, inverters, DC-DC converter.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
450
400
8
7
14
2
40
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
3.125
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SC4977
MAX
UNIT
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
C
= 0.1A; I
B
= 0
I
C
= 1mA; I
E
= 0
I
E
= 1mA; I
C
= 0
I
C
= 4A; I
B
= 0.8A
I
C
= 4A; I
B
= 0.8A
V
CB
= 450V; I
E
= 0
V
EB
= 8V; I
C
= 0
I
C
= 4A ; V
CE
= 5V
400
450
8
0.8
1.2
V
V
V
V
V
μA
μA
V
CE(
sat
)
V
BE(
sat
)
I
CBO
I
EBO
h
FE
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
100
100
10
Switching times
Turn-on Time
I
C
= 5A , I
B1
= -I
B2
=1A
R
L
= 30Ω; V
CC
= 150V
1.0
μs
μs
μs
t
on
t
stg
t
f
Storage Time
Fall Time
2.5
0.5
isc Website：www.iscsemi.cn
2
Embedded System
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