ZMM55-C2V4 SERIES
SURFACE MOUNT ZENER DIODES
VOLTAGE
2.4 to 47 Volts
POWER
500 mWatts
MINI-MELF/LL-34
Unit : inch (mm)
FEATURES
• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
.063(1.6)
• Pb free product are available :
99% Sn above can meet Rohs
environment substance directive request
.020(0.5)
.012(0.3)
.020(0.5)
.012(0.3)
.146(3.7)
.130(3.3)
MECHANICAL DATA
• Case: Molded Glass MINI-MELF
• Terminals: Solderable per MIL-STD-202G, Method 208
• Polarity: See Diagram Below
• Approx. Weight:
0.03 gram
• Mounting Position: Any
• Packing information
T/R - 2.5K per 7" plastic Reel
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
P ar m et r
a
e
P ow erD i si aton atTam b = 25
s p i
Juncton Tem per t r
i
aue
S t r ge Tem per t r R ange
oa
aue
O
S ym bol
Val e
u
500
175
- 5 t +175
5 o
U nis
t
mW
O
C
P
TO T
T
J
T
S
C
C
O
Vald pr vi ed t atl ads ata di t nce of8m m fom case ar keptatam bi ntt m per t r .
i o d
h e
sa
r
e
e e
aue
P ar m et r
a
e
Ther alR esi t nce Juncton t A m bi ntA i
m
sa
i o
e
r
For ar Volage atI = 100m A
w d
t
F
S ym bol
Mi.
n
-
-
-
-
Typ.
M ax.
0.
3
1
U nis
t
K/ W
m
V
Rt A
h
VF
-
-
-
-
Vald pr vi ed t atl ads ata di t nce of8m m fom case ar keptatam bi ntt m per t r .
i o d
h e
sa
r
e
e e
aue
REV.0-MAR.4.2005
.055(1.4)DIA.
PAGE . 1
ZMM55-C2V4 SERIES
N o m i a l Z e ne r V o l a g e
n
t
P a rt N um b e r
N om . V
Z M M 5 5 -C 2 V 4
Z M M 5 5 -C 2 V 7
Z M M 5 5 -C 3 V 0
Z M M 5 5 -C 3 V 3
Z M M 5 5 -C 3 V 6
Z M M 5 5 -C 3 V 9
Z M M 5 5 -C 4 V 3
Z M M 5 5 -C 4 V 7
Z M M 5 5 -C 5 V 1
Z M M 5 5 -C 5 V 6
Z M M 5 5 -C 6 V 2
Z M M 5 5 -C 6 V 8
Z M M 5 5 -C 7 V 5
Z M M 5 5 -C 8 V 2
Z M M 5 5 -C 9 V 1
Z M M 5 5 -C 1 0
Z M M 5 5 -C 11
Z M M 5 5 -C 1 2
Z M M 5 5 -C 1 3
Z M M 5 5 -C 1 5
Z M M 5 5 -C 1 6
Z M M 5 5 -C 1 8
Z M M 5 5 -C 2 0
Z M M 5 5 -C 2 2
Z M M 5 5 -C 2 4
Z M M 5 5 -C 2 7
Z M M 5 5 -C 3 0
Z M M 5 5 -C 3 3
Z M M 5 5 -C 3 6
Z M M 5 5 -C 3 9
Z M M 5 5 -C 4 3
Z M M 5 5 -C 4 7
2.
4
2.
7
3.
0
3.
3
3.
6
3.
9
4.
3
4.
7
5.
1
5.
6
6.
2
6.
8
7.
5
8.
2
9.
1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
V
Z
@ I
ZT
M i .V
n
2. 8
2
2.
5
2.
8
3.
1
3.
4
3.
7
4.
0
4.
4
4.
8
5.
2
5.
8
6.
4
7.
0
7.
7
8.
5
9.
4
10.
4
11 .
4
12.
4
13.
8
15.
3
16.
8
18.
8
20.
8
22.
8
25.
1
28
31
34
37
40
44
M a x. V
2. 6
5
2.
9
3.
2
3.
5
3.
8
4.
1
4.
6
5.
0
5.
4
6.
0
6.
6
7.
2
7.
9
8.
7
9.
6
10.
6
11 .
6
12.
7
14.
1
15.
6
17.
1
19.
1
21.
2
23.
3
25.
6
28.
9
32
35
38
41
46
50
Ω
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
11 0
M a x. Z e ne r I p e d a nce
m
Z
ZT
@ I
ZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.
5
2.
5
2.
5
Ω
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
11 0
11 0
170
170
220
220
220
220
220
220
220
500
600
700
Z
ZK
@ I
ZK
mA
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
uA
50
10
4
2
2
2
1
0.
5
0.
1
0.
1
0.
1
0.
1
0.
1
0.
1
0.
1
0.
1
0.
1
0.
1
0.
1
0.
1
0.
1
0.
1
0.
1
0.
1
0.
1
0.
1
0.
1
0.
1
0.
1
0.
1
0.
1
0.
1
M a x R e ve rse
L e a ka g e C urre nt
I @ V
R
R
V
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
1.
0
2.
0
3.
0
5.
0
6.
0
7.
0
7.
5
8.
5
9.
0
10
11
12
14
15
17
18
20
22
24
27
30
33
36
C 2V 4
C 2V 7
C 3V 0
C 3V 3
C 3V 6
C 3V 9
C 4V 3
C 4V 7
C 5V 1
C 5V 6
C 6V 2
C 6V 8
C 7V 5
C 8V 2
C 9V 1
C 10V
C 11 V
C 12V
C 13V
C 15V
C 16V
C 18V
C 20V
C 22V
C 24V
C 27V
C 30V
C 33V
C 36V
C 39V
C 43V
C 47V
M a rki g
n
co d e
REV.0-MAR.4.2005
PAGE . 2
ZMM55-C2V4 SERIES
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
R
thJA
–Therm.Resist.Junction/ Ambient ( K/W)
500
V
Ztn
– Relative
VoltageChange
1.3
V
Ztn
=V
Zt
/V
Z
(25°C)
400
1.2
1.1
1.0
0.9
0.8
–60
TK
VZ
=10 x 10
–4
/K
300
l
l
8 x 10
–4
/K
6 x 10
–4
/K
4 x 10
–4
/K
2 x 10
–4
/K
0
200
100
T
L
=constant
–2 x 10
–4
/K
–4 x 10
–4
/K
0
0
5
10
15
20
l – Lead Length ( mm )
0
60
120
180
240
95 961
1
95 9599
T
j
– Junction Temperature (°C )
Fig. 1 Thermal Resistance vs. Lead Length
Fig. 4 Typical Change of Working Voltage vs. Junction
Temperature
TK
VZ
–Temperature Coefficient of V
Z
( 10
–4
/K)
P –Total Power Dissipation ( mW)
tot
600
500
400
300
15
10
5
I
Z
=5mA
200
100
0
0
–5
0
10
20
30
40
0
40
80
120
160
200
50
95 9602
T
amb
– Ambient T
emperature(°C )
95 9600
V
Z
– Z-Voltage ( V )
Fig. 2 Total Power Dissipation vs. Ambient Temperature
Fig. 5 Temperature Coefficient of Vz vs. Z-Voltage
1000
C
D
– Diode Capacitance ( pF )
200
V
Z
–VoltageChange mV )
(
T
j
=25°C
150
V
R
=2V
100
100
T
j
=25°C
I
Z
=5mA
10
50
1
0
95 9598
0
5
10
15
20
25
95 9601
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Fig. 3 Typical Change of Working Voltage under Operating
Conditions at T
amb
=25°C
Fig. 6 Diode Capacitance vs. Z-Voltage
REV.0-MAR.4.2005
PAGE . 3
ZMM55-C2V4 SERIES
100
I
F
– Forward Current ( mA)
50
40
30
20
10
0
P
tot
=500mW
T
amb
=25°C
T
j
=25°C
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
I
Z
– Z-Current ( mA)
10
15
95 9607
20
25
30
35
95 9605
V
F
– Forward Voltage ( V )
V
Z
– Z-Voltage ( V )
Fig. 7 Forward Current vs. Forward Voltage
Fig. 9 Z-Current vs. Z-Voltage
I
Z
– Z-Current ( mA)
80
60
40
20
0
0
4
8
12
r
Z
– Differential Z-Resistance (
Ω
)
100
1000
P
tot
=500mW
T
amb
=25°C
I
Z
=1mA
100
5mA
10
10mA
1
T
j
=25°C
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
16
20
95 9606
95 9604
V
Z
– Z-Voltage ( V )
Fig. 8 Z-Current vs. Z-Voltage
Z
thp
–ThermalResistance PulseCond.(K/W)
for
Fig. 10 Differential Z-Resistance vs. Z-Voltage
1000
t
p
/T=0.5
100
t
p
/T=0.2
Single Pulse
R
thJA
=300K/W
T=T
jmax
–T
amb
10
t
p
/T=0.1
t
p
/T=0.02
t
p
/T=0.01
t
p
/T=0.05
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
x
T/Z
thp
)
1/2
)/(2r
zj
)
1
10
–1
10
0
10
1
t
p
– Pulse Length ( ms )
10
2
95 9603
Fig. 11 Thermal Response
REV.0-MAR.4.2005
PAGE . 4
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