LESHAN RADIO COMPANY, LTD.
Band-switching diode
FEATURES
· Ultra small plastic SMD package
· Low diode capacitance: max. 1.05 pF
· Low diode forward resistance: max. 0.7
Ω
· Small inductance.
APPLICATIONS
· Low loss band-switching in VHF television tuners
· Surface mount band-switching circuits.
DESCRIPTION
The BA891 is a planar, high performance band-switching diode in the ultra small
SOD523 SMD plastic package.
BA 891
1
2
SOD523 SC-79
1
CATHODE
2
ANODE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
I
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
CONDITIONS
MIN.
–
–
–
-65
-65
MAX.
35
100
715
+150
+150
UNIT
V
mA
mW
°C
°C
T
s
=90°C
ELECTRICAL CHARACTERISTICS
T
j
= 25°C unless otherwise specified.
SYMBOL
V
F
I
R
C
d
PARAMETER
forward voltage
reverse current
diode capacitance
CONDITIONS
I
F
=10 mA
V
R
=30 V
f = 1 MHz; note 1; see Fig.1
V
R
= 1 V
V
R
= 3 V
r
D
diode forward resistance
f = 100 MHz; note 1; see Fig.2
I
F
= 3 mA
I
F
= 10 mA
L
S
TYP.
–
–
0.8
0.65
0.45
0.36
0.6
MAX.
1
20
1.05
0.9
0.7
0.5
-
UNIT
V
nA
pF
pF
Ω
Ω
nH
series inductance
Note
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering-point
VALUE
85
UNIT
K/W
S21–1/2
LESHAN RADIO COMPANY, LTD.
BA 891
1
10
0.8
C
d
(pF)
0.6
r
D
(
Ω)
1
f = 1 MHz; T
j
=25°C
0
10
20
30
f = 100 MHz; T
j
=25°C
10
-1
10
–1
0.4
0.2
0
1
10
V
R
(V)
I
F
(mA )
Fig.1 Diode capacitance as a function of reverse
voltage; typical values.
Fig.2 Diode forward resistance as a function of
forward current; typical values.
S21–2/2
stm32/stm8
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