TC55V1403FT-20 datasheet, PDF - EEWORLD Datasheet

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TC55V1403FT-20: Description4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM; Categorystorage storage; File Size376KB，8 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TC55V1403FT-20 Overview

4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM

TC55V1403FT-20 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
package instruction	TSOP, TSOP32,.46
Reach Compliance Code	unknow
Maximum access time	20 ns
Spare memory width	1
I/O type	CONFIGURABLE
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
memory density	4194304 bi
Memory IC Type	STANDARD SRAM
memory width	4
Number of terminals	32
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP32,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
power supply	3.3 V
Certification status	Not Qualified
Maximum standby current	0.01 A
Minimum standby current	3 V
Maximum slew rate	0.13 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Base Number Matches	1

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TC55V1403FT-20 Related Products

	TC55V1403FT-20	TC55V1403J-15	TC55V1403J-20	TC55V1403J	TC55V1403FT-15
Description	4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM	4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM	4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM	4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM	4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM
Is it Rohs certified?	incompatible	incompatible	incompatible	-	-
Maker	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	-	Toshiba Semiconductor
package instruction	TSOP, TSOP32,.46	SOJ, SOJ32,.44	SOJ, SOJ32,.44	-	TSOP2, TSOP32,.46
Reach Compliance Code	unknow	unknow	unknow	-	unknow
Maximum access time	20 ns	15 ns	20 ns	-	15 ns
Spare memory width	1	1	1	-	1
I/O type	CONFIGURABLE	CONFIGURABLE	CONFIGURABLE	-	CONFIGURABLE
JESD-30 code	R-PDSO-G32	R-PDSO-J32	R-PDSO-J32	-	R-PDSO-G32
JESD-609 code	e0	e0	e0	-	-
memory density	4194304 bi	4194304 bi	4194304 bi	-	4194304 bi
Memory IC Type	STANDARD SRAM	CACHE SRAM	STANDARD SRAM	-	CACHE SRAM
memory width	4	4	4	-	4
Number of terminals	32	32	32	-	32
word count	1048576 words	1048576 words	1048576 words	-	1048576 words
character code	1000000	1000000	1000000	-	1000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	-	70 °C
organize	1MX4	1MX4	1MX4	-	1MX4
Output characteristics	3-STATE	3-STATE	3-STATE	-	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
encapsulated code	TSOP	SOJ	SOJ	-	TSOP2
Encapsulate equivalent code	TSOP32,.46	SOJ32,.44	SOJ32,.44	-	TSOP32,.46
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	-	PARALLEL
power supply	3.3 V	3.3 V	3.3 V	-	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
Maximum standby current	0.01 A	0.01 A	0.01 A	-	0.01 A
Minimum standby current	3 V	3 V	3 V	-	3 V
Maximum slew rate	0.13 mA	0.14 mA	0.13 mA	-	0.14 mA
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	-	3.3 V
surface mount	YES	YES	YES	-	YES
technology	CMOS	CMOS	CMOS	-	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	-	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	-
Terminal form	GULL WING	J BEND	J BEND	-	GULL WING
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	-	1.27 mm
Terminal location	DUAL	DUAL	DUAL	-	DUAL

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