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TC55V1001ASRI-85

Description
131,072-WORD BY 8-BIT CMOS STATIC RAM
Categorystorage    storage   
File Size555KB,13 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

TC55V1001ASRI-85 Overview

131,072-WORD BY 8-BIT CMOS STATIC RAM

TC55V1001ASRI-85 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
Parts packaging codeTSOP1
package instructionTSOP1-R,
Contacts32
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time85 ns
JESD-30 codeR-PDSO-G32
JESD-609 codee0
length11.8 mm
memory density1048576 bi
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1-R
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width8 mm
Cadence Chinese User Manual (Training Materials of Institute of Microelectronics, Chinese Academy of Sciences)
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