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DO224A-4M

Description
Variable Capacitance Diode, High Frequency to Ultra High Frequency, 10pF C(T), 12V, Silicon
CategoryDiscrete semiconductor    diode   
File Size60KB,1 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

DO224A-4M Overview

Variable Capacitance Diode, High Frequency to Ultra High Frequency, 10pF C(T), 12V, Silicon

DO224A-4M Parametric

Parameter NameAttribute value
MakerMsi Electronics Inc
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Other features3% MATCHED SET OF FOUR DIODES
Minimum breakdown voltage12 V
Shell connectionISOLATED
ConfigurationSEPARATE, 4 ELEMENTS
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio7
Nominal diode capacitance10 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandHIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeO-LALF-W2
Number of components4
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
minimum quality factor200
Maximum reverse current0.01 µA
Reverse test voltage10 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
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