Variable Capacitance Diode, 1.2pF C(T), 30V, Silicon, Hyperabrupt
| Parameter Name | Attribute value |
| Maker | Msi Electronics Inc |
| package instruction | O-CEMW-N2 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Minimum breakdown voltage | 30 V |
| Configuration | SINGLE |
| Diode Capacitance Tolerance | 5% |
| Minimum diode capacitance ratio | 5 |
| Nominal diode capacitance | 1.2 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| JESD-30 code | O-CEMW-N2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | ROUND |
| Package form | MICROWAVE |
| Certification status | Not Qualified |
| minimum quality factor | 1200 |
| Maximum reverse current | 0.02 µA |
| Reverse test voltage | 25 V |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | END |
| Varactor Diode Classification | HYPERABRUPT |
京公网安备 11010802033920号
EEWORLD
