Variable Capacitance Diode, 33pF C(T), Silicon, Abrupt
| Parameter Name | Attribute value |
| Maker | Msi Electronics Inc |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Other features | SUPER Q |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode Capacitance Tolerance | 10% |
| Minimum diode capacitance ratio | 4.4 |
| Nominal diode capacitance | 33 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| JESD-30 code | O-LALF-W2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Maximum power dissipation | 0.4 W |
| Certification status | Not Qualified |
| minimum quality factor | 200 |
| Maximum repetitive peak reverse voltage | 70 V |
| Maximum reverse current | 0.5 µA |
| Reverse test voltage | 65 V |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Varactor Diode Classification | ABRUPT |
京公网安备 11010802033920号
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