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ZC701C

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 8.2pF C(T), 30V, Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size60KB,1 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric Compare View All

ZC701C Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 8.2pF C(T), 30V, Silicon, Abrupt

ZC701C Parametric

Parameter NameAttribute value
MakerMsi Electronics Inc
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage30 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance2%
Minimum diode capacitance ratio2.7
Nominal diode capacitance8.2 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor450
Maximum repetitive peak reverse voltage30 V
Maximum reverse current2e-8 µA
Reverse test voltage25 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationABRUPT
This Material Copyrighted By Its Respective Manufacturer

ZC701C Related Products

ZC701C ZC701B ZC711C ZC899A ZC899B ZC703C
Description Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 8.2pF C(T), 30V, Silicon, Abrupt Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 8.2pF C(T), 30V, Silicon, Abrupt Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 56pF C(T), 30V, Silicon, Abrupt Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.6pF C(T), 25V, Silicon, Hyperabrupt Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.6pF C(T), 25V, Silicon, Hyperabrupt Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 12pF C(T), 30V, Silicon, Abrupt
Maker Msi Electronics Inc Msi Electronics Inc Msi Electronics Inc Msi Electronics Inc Msi Electronics Inc Msi Electronics Inc
package instruction O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Minimum breakdown voltage 30 V 30 V 30 V 25 V 25 V 30 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode Capacitance Tolerance 2% 5% 2% 10% 5% 2%
Minimum diode capacitance ratio 2.7 2.7 2.8 4 4 2.8
Nominal diode capacitance 8.2 pF 8.2 pF 56 pF 6.6 pF 6.6 pF 12 pF
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
frequency band VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Number of components 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Package body material GLASS GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum power dissipation 0.4 W 0.4 W 0.4 W 0.4 W 0.4 W 0.4 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
minimum quality factor 450 450 150 250 250 400
Maximum repetitive peak reverse voltage 30 V 30 V 30 V 25 V 25 V 30 V
Maximum reverse current 2e-8 µA 2e-8 µA 2e-8 µA 2e-8 µA 0.02 µA 2e-8 µA
Reverse test voltage 25 V 25 V 25 V 20 V 20 V 25 V
surface mount NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Varactor Diode Classification ABRUPT ABRUPT ABRUPT HYPERABRUPT HYPERABRUPT ABRUPT

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