Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 8.2pF C(T), 30V, Silicon, Abrupt
| Parameter Name | Attribute value |
| Maker | Msi Electronics Inc |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Minimum breakdown voltage | 30 V |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode Capacitance Tolerance | 2% |
| Minimum diode capacitance ratio | 2.7 |
| Nominal diode capacitance | 8.2 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| frequency band | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
| JESD-30 code | O-LALF-W2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Maximum power dissipation | 0.4 W |
| Certification status | Not Qualified |
| minimum quality factor | 450 |
| Maximum repetitive peak reverse voltage | 30 V |
| Maximum reverse current | 2e-8 µA |
| Reverse test voltage | 25 V |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Varactor Diode Classification | ABRUPT |

| ZC701C | ZC701B | ZC711C | ZC899A | ZC899B | ZC703C | |
|---|---|---|---|---|---|---|
| Description | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 8.2pF C(T), 30V, Silicon, Abrupt | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 8.2pF C(T), 30V, Silicon, Abrupt | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 56pF C(T), 30V, Silicon, Abrupt | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.6pF C(T), 25V, Silicon, Hyperabrupt | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.6pF C(T), 25V, Silicon, Hyperabrupt | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 12pF C(T), 30V, Silicon, Abrupt |
| Maker | Msi Electronics Inc | Msi Electronics Inc | Msi Electronics Inc | Msi Electronics Inc | Msi Electronics Inc | Msi Electronics Inc |
| package instruction | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Minimum breakdown voltage | 30 V | 30 V | 30 V | 25 V | 25 V | 30 V |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode Capacitance Tolerance | 2% | 5% | 2% | 10% | 5% | 2% |
| Minimum diode capacitance ratio | 2.7 | 2.7 | 2.8 | 4 | 4 | 2.8 |
| Nominal diode capacitance | 8.2 pF | 8.2 pF | 56 pF | 6.6 pF | 6.6 pF | 12 pF |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE |
| frequency band | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
| JESD-30 code | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Package body material | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| Maximum power dissipation | 0.4 W | 0.4 W | 0.4 W | 0.4 W | 0.4 W | 0.4 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| minimum quality factor | 450 | 450 | 150 | 250 | 250 | 400 |
| Maximum repetitive peak reverse voltage | 30 V | 30 V | 30 V | 25 V | 25 V | 30 V |
| Maximum reverse current | 2e-8 µA | 2e-8 µA | 2e-8 µA | 2e-8 µA | 0.02 µA | 2e-8 µA |
| Reverse test voltage | 25 V | 25 V | 25 V | 20 V | 20 V | 25 V |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
| Varactor Diode Classification | ABRUPT | ABRUPT | ABRUPT | HYPERABRUPT | HYPERABRUPT | ABRUPT |