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ZC713B

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 82pF C(T), 30V, Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size66KB,1 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

ZC713B Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 82pF C(T), 30V, Silicon, Abrupt

ZC713B Parametric

Parameter NameAttribute value
MakerMsi Electronics Inc
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage30 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio2.8
Nominal diode capacitance82 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor100
Maximum repetitive peak reverse voltage30 V
Maximum reverse current2e-8 µA
Reverse test voltage25 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationABRUPT
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