TC554001ATRI-85 datasheet, PDF

TC554001ATRI-85: Description524,228 WORDS x 8 BIT STATIC RAM; Categorystorage storage; File Size412KB，10 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TC554001ATRI-85 Overview

524,228 WORDS x 8 BIT STATIC RAM

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP32,.46
Contacts	32
Reach Compliance Code	unknow
ECCN code	3A991.B.2.A
Maximum access time	85 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	20.95 mm
memory density	4194304 bi
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP32,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
reverse pinout	YES
Maximum seat height	1.2 mm
Maximum standby current	0.0001 A
Minimum standby current	2 V
Maximum slew rate	0.07 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
width	10.16 mm
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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