EEWORLDEEWORLDEEWORLD

Part Number

Search

3N251

Description
Bridge Rectifier Diode, 1 Phase, 1.5A, 800V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size97KB,1 Pages
ManufacturerInternational Semiconductor Inc
Download Datasheet Parametric View All

3N251 Online Shopping

Suppliers Part Number Price MOQ In stock  
3N251 - - View Buy Now

3N251 Overview

Bridge Rectifier Diode, 1 Phase, 1.5A, 800V V(RRM), Silicon

3N251 Parametric

Parameter NameAttribute value
MakerInternational Semiconductor Inc
package instructionR-PSIP-W4
Reach Compliance Codeunknow
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeR-PSIP-W4
Maximum non-repetitive peak forward current30 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formWIRE
Terminal locationSINGLE

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1437  1531  1311  1643  675  29  31  27  34  14 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号