SMLJ150C datasheet, PDF - EEWORLD Datasheet

SMLJ150C: DescriptionTrans Voltage Suppressor Diode, 3000W, 150V V(RWM), Bidirectional, 1 Element, Silicon; CategoryDiscrete semiconductor diode; File Size232KB，2 Pages; ManufacturerInternational Semiconductor Inc

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SMLJ150C Overview

Trans Voltage Suppressor Diode, 3000W, 150V V(RWM), Bidirectional, 1 Element, Silicon

Parameter Name	Attribute value
Maker	International Semiconductor Inc
package instruction	R-PDSO-C2
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW INDUCTANCE
Maximum breakdown voltage	204 V
Minimum breakdown voltage	167 V
Breakdown voltage nominal value	186 V
Maximum clamping voltage	268 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak reverse power dissipation	3000 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
polarity	BIDIRECTIONAL
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	150 V
Maximum reverse current	5 µA
surface mount	YES
technology	AVALANCHE
Terminal form	C BEND
Terminal location	DUAL

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