BAL99LT1 datasheet, PDF - EEWORLD Datasheet

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BAL99LT1: DescriptionSwitching Diode; CategoryDiscrete semiconductor diode; File Size44KB，2 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn; Environmental Compliance

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BAL99LT1 Overview

Switching Diode

BAL99LT1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	LRC
package instruction	R-PDSO-G3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.715 V
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	0.1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.225 W
Maximum repetitive peak reverse voltage	70 V
Maximum reverse recovery time	0.006 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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LESHAN RADIO COMPANY, LTD.

Switching Diode

ANODE

CATHODE

BAL99LT1

MAXIMUM RATINGS

Rating

Continuous Reverse Voltage

Peak Forward Current

Symbol

Value

100

Unit

Vdc

mAdc

CASE 318–08, STYLE 18

SOT–23 (TO–236AB)

DEVICE MARKING

BAL99LT1 = JF

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR– 5 Board, (1)

= 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

Alumina Substrate, (2) T

= 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

Symbol

Max

225

1.8

θJA

556

300

2.4

θJA

, T

stg

417

–55 to +150

Unit

mW/°C

°C/W

mW/°C

°C/W

°C

ELECTRICAL CHARACTERISTICS

(T A = 25°C unless otherwise noted)

Characteristic

Symbol

—

(BR)

—

715

855

1000

1250

1.5

6.0

1.75

Vdc

2.5

—

Vdc

Min

Max

Unit

µAdc

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

= 70 Vdc)

= 25 Vdc, T

= 150°C)

= 70 Vdc, T

= 150°C)

Reverse Breakdown Voltage

= 100

µAdc)

Forward Voltage

= 1.0 mAdc)

= 10 mAdc)

= 50 mAdc)

= 150 mAdc)

Recovery Current

= 10 mAdc, V

= 5.0 Vdc, R

= 500

Ω)

Diode Capacitance

= 0, f = 1.0 MHz)

Reverse Recovery Time

= I

= 10 mAdc, R

= 100

Ω,

measured at I

= 1.0 mAdc)

Forward Recovery Voltage

= 10 mAdc, t

= 20 ns)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

G1–1/2

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