LESHAN RADIO COMPANY, LTD.
Silicon PIN diode
FEATURES
· High voltage, current controlled
· RF resistor for RF attenuators and switches
· Low diode capacitance
· Low diode forward resistance
· Very low series inductance
· For applications up to 3 GHz.
APPLICATIONS
· RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD523 ultra small plastic SMD package.
BAP64 – 02
1
2
SOD523 SC-79
1
CATHODE
2
ANODE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
CONDITIONS
MIN.
–
–
–
-65
-65
MAX.
175
100
715
+150
+150
UNIT
V
mA
mW
°C
°C
I
T
s
=90°C
ELECTRICAL CHARACTERISTICS
T
j
= 25°C unless otherwise specified.
SYMBOL
V
F
I
R
C
d
PARAMETER
forward voltage
reverse current
diode capacitance
CONDITIONS
I
F
=50 mA
V
R
=175V
V
R
=20V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
I
F
= 100 mA; f = 100 MHz; note 1
τ
L
charge carrier life time
when switched from I
F
=10 mA to
I
R
= 6 mA; R
L
= 100
Ω;
measured at I
R
=3 mA
L
Note
S
TYP.
0.95
–
–
0.48
0.35
0.23
20
10
2
0.7
1.55
MAX.
1.1
10
1
–
–
0.35
40
20
3.8
1.35
–
UNIT
V
µA
µA
pF
pF
pF
Ω
Ω
Ω
Ω
µs
series inductance
0.6
–
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering-point
VALUE
85
UNIT
K/W
S26–1/2
LESHAN RADIO COMPANY, LTD.
BAP64-02
10
2
f = 100 MHz; T
j
=25°C
500
400
10
C
d
(pF)
1
r
D
(
Ω)
300
200
100
10
-1
f = 1 MHz; T
j
=25°C
10
-1
1
10
10
2
0
0
4
8
12
16
20
I
F
(mA )
V
R
(V)
Fig.1 Forward resistance as a function of
forward current; typical values.
Fig.2 Diode capacitance as a function of
reverse voltage; typical values.
0
0
-1
|s
21
|
2
(dB)
- 10
-2
(1)
(2)
(3)
(4)
I
F
=100 mA.
I
F
=10 mA.
I
F
= 1 mA.
I
F
= 0.5 mA.
-3
|s
21
|
2
(dB)
- 20
-4
Diode inserted in series with a 50
Ω
stripline circuit and
biased via the analyzer Tee network.
Tamb =25°C.
Diode zero biased and inserted in
series with a 50
Ω
stripline circuit.
Tamb =25°C.
-5
0.5
1
1.5
2
2.5
3
- 30
0.5
1
1.5
2
2.5
3
f (GHz )
f (GHz )
Fig.3 Insertion loss ( |s
21
|
2
)of the diode in on-state
as a function of frequency; typical values.
Fig.4 Isolation ( |s
21
|
2
) of the diode in off-state as a
function of frequency; typical values.
S26–2/2
DSP and ARM Processors
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