DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D168
BAQ806
AM PIN diode
Product specification
File under Discrete Semiconductors, SC10
1998 Aug 03
Philips Semiconductors
Product specification
AM PIN diode
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
UL 94V-O classified plastic
package
•
Shipped in 12 mm embossed tape.
APPLICATIONS
•
RF attenuator with low distortion for
frequencies above 100 kHz.
handbook, 4 columns
BAQ806
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
cathode
band
k
a
Top view
Side view
MSA474
Fig.1 Simplified outline (SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
T
stg
T
j
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
storage temperature
junction temperature
MIN.
−
−
−65
−65
MAX.
100
100
+175
+150
V
V
°C
°C
UNIT
1998 Aug 03
2
Philips Semiconductors
Product specification
AM PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 100 mA; see Figs 2 and 3
I
F
= 100 mA; T
j
= T
j max
;
see Figs 2 and 3
I
R
τ
reverse current
charge carrier life time
V
R
= 100 V; see Fig. 4
V
R
= 100 V; T
j
= 125
°C;
see Fig. 4
when switched from I
F
= 10 mA to
I
R
= 6 mA; measured at 10% of I
R
;
see Fig. 13
f = 1 MHz; see Figs 5, 6, 7 and 8
V
R
= 0 V
V
R
= 2 V
r
D
diode forward resistance
f = 100 kHz; see Figs 9 and 14
I
F
= 10
µA
I
F
= 100
µA
I
F
= 1 mA
I
F
= 10 mA
r
s
diode series resistance
f = 100 kHz; see Figs 10, 11 and 12
V
R
= 0 V
V
R
= 2 V
f = 1 MHz; see Figs 10, 11 and 12
V
R
= 0 V
V
R
= 2 V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
note 2
Note
CONDITIONS
25
100
50
250
1000
5000
2100
12000
−
−
−
−
3300
560
62
7
−
−
9
5
MIN.
−
−
−
−
15
TYP.
0.9
0.7
−
−
25
BAQ806
MAX.
1.1
0.9
0.1
30
−
V
V
UNIT
µA
µA
µs
C
d
diode capacitance
11
6
6000
900
90
10
−
−
−
−
pF
pF
Ω
Ω
Ω
Ω
kΩ
kΩ
kΩ
kΩ
VALUE
25
100
150
UNIT
K/W
K/W
K/W
1. Device mounted on Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of copper
≥35 µm,
see Fig. 15
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm,
see Fig. 15.
For more information please refer to the
‘General Part of Handbook SC10’
1998 Aug 03
3
Philips Semiconductors
Product specification
AM PIN diode
GRAPHICAL DATA
MGG500
BAQ806
handbook, halfpage
10
4
IF
(mA)
10
3
10
2
10
4
handbook, halfpage
IF
(mA)
10
3
10
2
MGG501
10
10
1
10
−1
10
−2
0
0.4
0.8
1.2
1.6
VF (V)
Dotted line: T
j
= T
j max
.
Solid line: T
j
= 25
°C.
2.0
1
10
−1
10
−2
0
0.4
0.8
1.2
1.6
VF (V)
2.0
Dotted line: T
j
= T
j max
.
Solid line: T
j
= 25
°C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
10
2
MGG502
IR
(µA)
10
1
10
−1
0
50
100
Tj (°C)
150
V
R
= V
RRMmax.
Fig.4
Reverse current as a function of junction
temperature; maximum values.
1998 Aug 03
4
Philips Semiconductors
Product specification
AM PIN diode
BAQ806
MGM477
handbook, halfpage
10
handbook, halfpage
12
MGM478
Cd
(pF)
Cd
(pF)
0V
8
8
6
4
4
2
2V
0
0
2
4
6
8
VR (V)
10
0
10
10
2
10
3
f (kHz)
10
4
f = 1 MHz
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
Fig.6
Diode capacitance as a function of
frequency; typical values.
handbook, halfpage
40
MGM479
handbook, halfpage
6
MGM480
Cd
(pF)
30
Cd
(pF)
5
85
°C
25
°C
−40 °C
20
85
°C
25
°C
−40 °C
4
10
3
0
10
10
2
10
3
f (kHz)
10
4
2
10
10
2
10
3
f (kHz)
10
4
V
R
= 0 V.
V
R
= 2 V.
Fig.7
Diode capacitance as a function of
frequency; typical values.
Fig.8
Diode capacitance as a function of
frequency; typical values.
1998 Aug 03
5
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