Silicon PIN Diode
q
RF switch
q
RF attenuator for frequencies above 1 MHz
q
Low distortion factor
q
Long-term stability of electrical characteristics
BAR 17
Type
BAR 17
Marking
L6
Ordering Code
(tape and reel)
Q62702-A858
Pin Configuration
Package
1)
SOT-23
Maximum Ratings
Parameter
Reverse voltage
Forward current
Total power dissipation,
T
S
≤
95 ˚C
2)
Junction temperature
Storage temperature range
Operating temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
≤
295
≤
215
Symbol
V
R
I
F
P
tot
T
j
T
stg
T
op
Values
100
140
250
150
– 55 … + 150
– 55 … + 150
Unit
V
mA
mW
˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm
×
16.7 mm
×
0.7 mm.
Semiconductor Group
1
07.94
BAR 17
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Reverse current
V
R
= 50 V
V
R
= 100 V
Forward voltage
I
F
= 100 mA
Diode capacitance
V
R
= 50 V,
f
= 1 MHz
V
R
= 0,
f
= 100 MHz
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA
Forward resistance
f
= 100 MHz,
I
F
= 0.01 mA
I
F
= 0.1 mA
I
F
= 1.0 mA
I
F
= 10 mA
Symbol
min.
I
R
–
–
V
F
C
T
–
–
τ
L
Values
typ.
–
–
0.91
max.
50
1
1
Unit
nA
µ
A
V
pF
–
0.32
0.37
4
0.55
–
–
µ
s
–
r
f
–
–
–
–
1150
160
23
3.5
–
–
–
–
Ω
Semiconductor Group
2
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