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BAR64-04T

Description
150 V, SILICON, PIN DIODE
CategoryDiscrete semiconductor    diode   
File Size498KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BAR64-04T Overview

150 V, SILICON, PIN DIODE

BAR64-04T Parametric

Parameter NameAttribute value
MakerInfineon
Parts packaging codeSC-75
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
applicationATTENUATOR; SWITCHING
Minimum breakdown voltage150 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Maximum diode capacitance0.35 pF
Nominal diode capacitance0.23 pF
Diode component materialsSILICON
Maximum diode forward resistance1.35 Ω
Diode typePIN DIODE
frequency bandMEDIUM FREQUENCY TO C BAND
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Minority carrier nominal lifetime1.55 µs
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.25 W
Certification statusNot Qualified
Reverse test voltage20 V
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
BAR64...
Silicon PIN Diode
High voltage current controlled RF resistor
for RF attenuator and switches
Frequency range above 1 MHz up to 6 GHz
Very low capacitance at zero volt reverse bias
at frequencies above 1 GHz (typ. 0.17 pF)
Very low signal distortion


1




Low forward resistance (typ. 2.1
@ 10 mA)
BAR64-02L
BAR64-02V
BAR64-03W
BAR64-04
BAR64-04T
BAR64-04W
3
BAR64-05
BAR64-05W
3
BAR64-06
BAR64-06W
3
BAR64-07
4
3
2
D 1
D 2
D 1
D 2
D 1
D 2
D 1
D 2
1
2
1
2
1
2
1
2
Type
BAR64-02L *
BAR64-02V
BAR64-03W
BAR64-04
BAR64-04T
BAR64-04W
BAR64-05
BAR64-05W
BAR64-06
BAR64-06W
BAR64-07
Package
TSLP-2-1
SC79
SOD323
SOT23
SC75
SOT323
SOT23
SOT323
SOT23
SOD323
SOT143
Configuration
single, leadless
single
single
series
series
series
common cathode
common cathode
common anode
common anode
parallel pair
L
S
(nH)
0.4
0.6
1.8
1.8
1.2
1.4
1.8
1.4
1.8
1.4
2
Marking
MM
O
2 blue
PPs
PPs
PPs
PRs
PRs
PSs
PSs
PTs
* Preliminary Data
1
Feb-14-2003

BAR64-04T Related Products

BAR64-04T BAR64 BAR64-02L
Description 150 V, SILICON, PIN DIODE 200 V, SILICON, PIN DIODE 150 V, SILICON, PIN DIODE
Maker Infineon Infineon Infineon
package instruction R-PDSO-G3 VPS05161, 3 PIN LEADLESS, TSLP-2
Contacts 3 3 2
Reach Compliance Code compliant _compli compli
ECCN code EAR99 EAR99 EAR99
application ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING
Minimum breakdown voltage 150 V 200 V 150 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SINGLE SINGLE
Maximum diode capacitance 0.35 pF 0.35 pF 0.35 pF
Nominal diode capacitance 0.23 pF 0.35 pF 0.23 pF
Diode component materials SILICON SILICON SILICON
Maximum diode forward resistance 1.35 Ω 1.35 Ω 1.35 Ω
Diode type PIN DIODE PIN DIODE PIN DIODE
frequency band MEDIUM FREQUENCY TO C BAND MEDIUM FREQUENCY TO S BAND MEDIUM FREQUENCY TO C BAND
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-XBCC-N2
Minority carrier nominal lifetime 1.55 µs 1.55 µs 1.55 µs
Number of components 2 1 1
Number of terminals 3 3 2
Maximum operating temperature 150 °C 150 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE CHIP CARRIER
Maximum power dissipation 0.25 W 0.25 W 0.25 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
technology POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE
Terminal form GULL WING GULL WING NO LEAD
Terminal location DUAL DUAL BOTTOM
Parts packaging code SC-75 - DFN
JESD-609 code e3 e0 -
Reverse test voltage 20 V - 20 V
Terminal surface MATTE TIN Tin/Lead (Sn/Pb) -
Base Number Matches 1 - 1
Other features - HIGH VOLTAGE LOW DISTORTION
Diode resistance test current - 10 mA 1 mA
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