GS8662T20AGE-375I datasheet, PDF

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GS8662T20AGE-375I: DescriptionDDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165; Categorystorage storage; File Size1MB，31 Pages; ManufacturerGSI Technology; Websitehttp://www.gsitechnology.com/; Environmental Compliance

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GS8662T20AGE-375I Overview

DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

GS8662T20AGE-375I Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	GSI Technology
Parts packaging code	BGA
package instruction	LBGA,
Contacts	165
Reach Compliance Code	compli
ECCN code	3A991.B.2.B
Maximum access time	0.45 ns
JESD-30 code	R-PBGA-B165
JESD-609 code	e1
length	17 mm
memory density	75497472 bi
Memory IC Type	DDR SRAM
memory width	18
Humidity sensitivity level	3
Number of functions	1
Number of terminals	165
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	4MX18
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	1.5 mm
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15 mm

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Preliminary

GS8662T20/38AE-450/400/375/333/300

165-Bump BGA

Commercial Temp

Industrial Temp

Features

• 2.5 Clock Latency

• Simultaneous Read and Write SigmaCIO™ Interface

• Common I/O bus

• JEDEC-standard pinout and package

• Double Data Rate interface

• Byte Write (x36 and x18) and Nybble Write (x8) function

• Burst of 2 Read and Write

• 1.8 V +100/–100 mV core power supply

• 1.5 V or 1.8 V HSTL Interface

• Pipelined read operation with self-timed Late Write

• Fully coherent read and write pipelines

• ZQ pin for programmable output drive strength

• IEEE 1149.1 JTAG-compliant Boundary Scan

• Pin-compatible with present 9Mb, 18Mb, 36Mb and future

144Mb devices

• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package

• RoHS-compliant 165-bump BGA package available

72Mb SigmaCIO DDR-II+

Burst of 2 SRAM

450 MHz–300 MHz

1.8 V V

1.8 V and 1.5 V I/O

Bottom View

165-Bump, 15 mm x 17 mm BGA

1 mm Bump Pitch, 11 x 15 Bump Array

SigmaCIO™ Family Overview

The GS8662T20/38AE are built in compliance with the

SigmaCIO DDR-II+ SRAM pinout standard for Common I/O

synchronous SRAMs. They are 75,497,472-bit (72Mb)

SRAMs. The GS8662T20/38AE SigmaCIO SRAMs are just

one element in a family of low power, low voltage HSTL I/O

SRAMs designed to operate at the speeds needed to implement

economical high performance networking systems.

Clocking and Addressing Schemes

The GS8662T20/38AE SigmaCIO DDR-II+ SRAMs are

synchronous devices. They employ two input register clock

inputs, K and K. K and K are independent single-ended clock

inputs, not differential inputs to a single differential clock input

buffer.

Common I/O x36 and x18 SigmaCIO DDR-II+ B2RAMs

always transfer data in two packets. When a new address is

loaded, A0 presets an internal 1 bit address counter. The

counter increments by 1 (toggles) for each beat of a burst of

two data transfer.

Common I/O x8 SigmaCIO DDR-II+ B2 RAMs always

transfer data in two packets. When a new address is loaded,

the LSB is internally set to 0 for the first read or write transfer,

and incremented by 1 for the next transfer. Because the LSB

is tied off internally, the address field of a x8 SigmaCIO DDR-

II+ B4 RAM is always one address pin less than the advertised

index depth (e.g., the 4M x 18 has a 2048K addressable index).

Parameter Synopsis

-450

tKHKH

tKHQV

2.22 ns

0.45 ns

-400

2.5 ns

0.45 ns

-375

2.67 ns

0.45 ns

-333

3.3 ns

0.45 ns

-300

3.0 ns

0.45 ns

Rev: 1.00b 10/2009

1/31

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8662T20/38AE-450/400/375/333/300

Background

Common I/O SRAMs, from a system architecture point of view, are attractive in read dominated or block transfer applications.

Therefore, the SigmaCIO DDR-II+ SRAM interface and truth table are optimized for burst reads and writes. Common I/O SRAMs

are unpopular in applications where alternating reads and writes are needed because bus turnaround delays can cut high speed

Common I/O SRAM data bandwidth in half.

Burst Operations

Read and write operations are "burst" operations. In every case where a read or write command is accepted by the SRAM, it will

respond by issuing or accepting two beats of data, executing a data transfer on subsequent rising edges of K and K, as illustrated in

the timing diagrams. It is not possible to stop a burst once it starts. Two beats of data are always transferred. This means that it is

possible to load new addresses every K clock cycle. Addresses can be loaded less often, if intervening deselect cycles are inserted.

Deselect Cycles

Chip Deselect commands are pipelined to the same degree as read commands. This means that if a deselect command is applied to

the SRAM on the next cycle after a read command captured by the SRAM, the device will complete the two beat read data transfer

and then execute the deselect command, returning the output drivers to high-Z. A high on the LD pin prevents the RAM from

loading read or write command inputs and puts the RAM into deselect mode as soon as it completes all outstanding burst transfer

operations.

SigmaCIO DDR-II+ B2 SRAM Read Cycles

The SRAM executes pipelined reads. The status of the Address, LD and R/W pins are evaluated on the rising edge of K. The read

command (LD low and R/W high) is clocked into the SRAM by a rising edge of K.

SigmaCIO DDR-II+ B2 SRAM Write Cycles

The status of the Address, LD and R/W pins are evaluated on the rising edge of K. The SRAM executes "late write" data transfers.

Data in is due at the device inputs on the rising edge of K following the rising edge of K clock used to clock in the write command

(LD and R/W low) and the write address. To complete the remaining beat of the burst of two write transfer, the SRAM captures

data in on the next rising edge of K, for a total of two transfers per address load.

Rev: 1.00b 10/2009

5/31

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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