HB56D236SB-8 datasheet, PDF - EEWORLD Datasheet

HB56D236SB-8: DescriptionFast Page DRAM Module, 2MX36, 80ns, CMOS, SIMM-72; Categorystorage storage; File Size371KB，12 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HB56D236SB-8 Overview

Fast Page DRAM Module, 2MX36, 80ns, CMOS, SIMM-72

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
Parts packaging code	SIMM
package instruction	,
Contacts	72
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FAST PAGE
Maximum access time	80 ns
Other features	RAS ONLY/CAS BEFORE RAS REFRESH
Spare memory width	18
JESD-30 code	R-XSMA-N72
memory density	75497472 bi
Memory IC Type	FAST PAGE DRAM MODULE
memory width	36
Number of functions	1
Number of ports	1
Number of terminals	72
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX36
Output characteristics	3-STATE
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified
refresh cycle	1024
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal location	SINGLE

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