DATA SHEET
SEMICONDUCTOR
BAV99W-A
Dual Serise
Switching Diodes
Features
H
SOT-323
3
•
Pb−Free Package May be Available. The G−Suffix Denotes a
•
AEC-Q101 qualified
Pb−Free Lead Finish
Base P/N - RoHS compliant, commercial grade
Base P/N-A - RoHS compliant, AEC-Q101 qualified
The BAV99W is a smaller package, equivalent to the BAV99
Suggested Applications
• ESD Protection
• Polarity Reversal Protection
• Data Line Protection
• Inductive Load Protection
• Steering Logic
ORDERING INFORMATION
Device
BAV99W
Package
SOT–323
Shipping
1
ANODE
1
2
CATHODE
2
3
CATHODE/ANODE
BAV99W
CATHODE
1
ANODE
2
3
3000/Tape & Reel
CATHODE/ANODE
BAV99RW
DEVICE MARKING
BAV99W = A7
MAXIMUM RATINGS
(Each Diode)
Rating
Reverse Voltag
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward
Current (Note 1.)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current
t = 1.0
µs
t = 1.0 ms
t = 1.0 S
1. FR–5 = 1.0
×
0.75
×
0.062 in.
I
FRM
I
FSM
450
2.0
1.0
0.5
mA
A
Symbol
V
R
I
F
I
FM(surge)
V
RRM
I
F(AV)
Value
70
215
500
70
715
Unit
Vdc
mAdc
mAdc
V
mA
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BAV99W-A
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR–5 Board, (Note 1.) T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (Note 2.) T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Characteristic
R
θJA
P
D
Symbol
P
D
Max
200
1.6
625
300
2.4
417
–65 to +150
Min
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Max
Unit
R
θJA
T
J
,T
stg
Symbol
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Each Diode)
OFF CHARACTERISTICS
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
(I
(BR)
= 100
µA)
(V
R
= 70 Vdc)
(V
R
= 25 Vdc, T
J
= 150°C)
(V
R
= 70 Vdc, T
J
= 150°C)
V
(BR)
I
R
70
––
––
––
––
––
––
––
––
––
––
––
2.5
30
50
1.5
715
855
1000
1250
6.0
1.75
Vdc
µAdc
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
C
D
V
F
pF
mVdc
Reverse Recovery Time
R
L
= 100
Ω
(I
F
=I
R
=10 mAdc, i
R(REC)
=1.0mAdc) (Figure 1)
Forward Recovery Voltage (I
F
= 10 mA, t
r
= 20 ns)
1. FR–5 = 1.0
×
0.75
×
0.062 in.
2. Alumina = 0.4
×
0.3
×
0.024 in. 99.5% alumina.
t
rr
V
FR
ns
V
+10 V
820
Ω
2.0 k
0.1µF
t
r
t
p
10%
t
I
F
t
rr
t
100
µH
I
F
0.1
µF
50
Ω
OUTPUT
PULSE
GENERATOR
D.U.T.
50
Ω
INPUT
SAMPLING
OSCILLOSCOPE
90%
V
R
INPUT SIGNAL
I
R
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
F
) of 10mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
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REV.02 20120305
DEVICE CHARACTERISTICS
BAV99W-A
100
10
I
F
, FORWARD CURRENT (mA)
I
R
, REVERSE CURRENT (µA)
1.0
10
0.1
1.0
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0
10
20
30
40
50
V
F
, FORWARD VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
C
D
DIODE CAPACITANCE (pF)
1.50
0
2
4
6
8
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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REV.02 20120305
PACKAGE OUTLINE AND DIMENSIONS
BAV99W-A
SOT-323
NOTES:
1.
DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
L
3
DIM
A
B
C
D
G
H
J
K
L
N
S
S
1
2
B
D
G
C
0.05 (0.002)
N
K
J
INCHES MILLIMETERS
MIN
MA X
MIN
MA X
0.071 0.087
1.80
2.20
0.045 0.053
1.15
1.35
1.00
0.80
0.032 0.040
0.012 0.016
0.30
0.40
0.047 0.055
1.20
1.40
0.000 0.004
0.00
0.10
0.004 0.010
0.10
0.25
0.017 REF
0.425 REF
0.026 BSC
0.650 BSC
0.028 REF
0.700 REF
2.00
2.40
0.079 0.095
H
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
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REV.02 20120305
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