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BAR64-06W

Description
150 V, SILICON, PIN DIODE
CategoryDiscrete semiconductor    diode   
File Size48KB,4 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BAR64-06W Overview

150 V, SILICON, PIN DIODE

BAR64-06W Parametric

Parameter NameAttribute value
MakerSIEMENS
Parts packaging codeSC-70
package instructionR-PDSO-G3
Contacts3
Manufacturer packaging codeSOT323
Reach Compliance Codeunknow
Is SamacsysN
Other featuresHIGH VOLTAGE
applicationATTENUATOR; SWITCHING
Minimum breakdown voltage200 V
ConfigurationCOMMON ANODE, 2 ELEMENTS
Maximum diode capacitance0.35 pF
Diode component materialsSILICON
Maximum diode forward resistance20 Ω
Diode typePIN DIODE
frequency bandS BAND
JESD-30 codeR-PDSO-G3
Minority carrier nominal lifetime1.55 µs
Number of components2
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.25 W
Certification statusNot Qualified
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
BAR 64 ... W
Silicon PIN Diode
High voltage current controlled
RF resistor for RF attenuator and switches
Frequency range above 1 MHz
Low resistance and short carrier lifetime
For frequencies up to 3 GHz
3
2
1
VSO05561
BAR 64-04W
BAR 64-05W
BAR 64-06W
Type
BAR 64-04W
BAR 64-05W
BAR 64-06W
Marking Ordering Code
PPs
PRs
PSs
Q62702-A1264
Q62702-A1265
Q62702-A1266
Pin Configuration
1 = A1
1 = A1
1 = C1
2 = C2
2 = C2
2 = C2
3 = C1/2
3 = A1/2
Package
3=C1/A2 SOT-323
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total power dissipation,
T
S
115 °C
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Junction - ambient
1)
Symbol
Value
200
100
250
150
- 55 ...+150
- 55 ...+150
Unit
V
mA
mW
°C
V
R
I
F
P
tot
T
j
T
op
T
stg
R
thJA
R
thJS
300
140
K/W
Junction - soldering point
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
Semiconductor Group
1
1
Sep-04-1998
1998-11-01

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Description 150 V, SILICON, PIN DIODE 150 V, SILICON, PIN DIODE 150 V, SILICON, PIN DIODE 150 V, SILICON, PIN DIODE 150 V, SILICON, PIN DIODE 150 V, SILICON, PIN DIODE 150 V, SILICON, PIN DIODE
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