BAR67...
Silicon PIN Diode
For low loss RF switches and attenuators
Very low capacitance at zero volt reverse
bias at frequencies above 1 GHz (typ. 0.25 pF)
Low harmonics
1
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
, BAR67-02V
1
For
calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Low forward resistance (typ. 1.5
@ 5mA)
BAR67-02V
2
Type
BAR67-02V
Package
SC79
Configuration
single
L
S
(nH)
Marking
0.6
T
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Total power dissipation
T
S
118°C
T
j
T
op
T
stg
Symbol
R
thJS
150
-55 ... 125
-55 ... 150
°C
Symbol
V
R
I
F
P
tot
Value
150
200
250
Unit
V
mA
mW
Value
115
Unit
K/W
Feb-04-2003
BAR67...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
Breakdown voltage
I
(BR)
= 5 µA
Reverse current
V
R
= 100 V
Forward voltage
I
F
= 50 mA
AC Characteristics
Diode capacitance
V
R
= 5 V,
f
= 1 MHz
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1 GHz
V
R
= 0 V,
f
= 1.8 GHz
Reverse parallel resistance
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1 GHz
V
R
= 0 V,
f
= 1.8 GHz
Forward resistance
I
F
= 5 mA,
f
= 100 MHz
I
F
= 10 mA,
f
= 100 MHz
I
F
= 10 mA,
I
R
= 6 mA, measured at
I
R
= 3 mA,
I-region width
r
f
-
-
rr
Unit
max.
-
20
1.2
V
nA
V
typ.
-
-
0.95
V
(BR)
I
R
V
F
150
-
-
C
T
-
-
-
-
R
P
-
-
-
25
4
2.5
1.5
1
700
-
-
-
1.8
-
-
0.35
0.35
0.25
0.23
0.55
0.9
-
-
pF
R
L
= 100
2
Charge carrier life time
-
ns
W
I
-
13
-
µm
Feb-04-2003
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