BAR 80
l
l
l
Silicon RF Switching Diode
Design for use in shunt configuration
Hight shunt signal isolation
Low shunt insertion loss
Type
BAR 80
Marking
AAs
Ordering code
(tape and reel)
Q62702-A1084
Pin configuration
1
2
3
C
A
C
Package
4
A
MW-4
1)
Maximum ratings
Parameter
Reverse voltage
Forward current
Operating temperature range
Storage temperature range
Symbol
BAR 80
35
100
-55...+125
-55...+150
Unit
V
mA
°C
°C
V
R
I
F
T
op
T
stg
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
Edition A02, 27.02.95
BAR 80
Electrical characteristics
at
T
A
= 25
°C,
unless otherwise specified.
Parameter
Reverse current
V
R
= 20 V
Forward voltage
I
F
= 100 mA
Diode capacitance
V
R
= 1 V,f = 1 MHz
V
R
= 3 V,f = 1 MHz
Forward resistance
Symbol
min.
Value
typ.
-
0.92
1
0.92
0.5
0.14
max.
Unit
nA
I
R
-
20
V
F
-
1
V
pF
-
0.6
1.6
1.3
Ω
-
0.7
nH
-
-
C
T
f
= 100MHz
r
f
L
s
I
F
= 5 mA
Series inductance to ground
Application information
Shunt signal isolation
-
-
23
0.15
-
dB
dB
-
-
I
F
= 10 mA,
f
= 2 GHz,
R
G
=
R
L
= 50
Ω
Shunt insertion loss
V
R
= 5 V,
f
= 2 GHz,
R
G
=
R
L
= 50
Ω
IL
Configuration of the shunt-diode
-A perfect ground is essential
for optimum isolation
-The anode pins should be used
as passage for RF
Semiconductor Group
2
Edition A02, 27.02.95
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