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2SD1286

Description
Bipolar Transistors;NPN;1A;60V;TO-251
CategoryDiscrete semiconductor   
File Size193KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet View All

2SD1286 Overview

Bipolar Transistors;NPN;1A;60V;TO-251

INCHANGE Semiconductor
isc
Silicon NPN Darlington Power Transistor
DESCRIPTION
·With
TO-251(IPAK) packaging
·Very
high DC current gain
·Monolithic
darlington transistor with integrated
antiparallel collector-emitter diode
·Complement
to type 2SB963
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·AC-DC
motor control
·Electronic
ignition
·Alternator
regulator
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
T
T
j
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Total Power Dissipation
Max.Junction Temperature
Storage Temperature Range
VALUE
60
60
8
1
2
10
150
-55~150
UNIT
V
V
V
A
A
W
2SD1286
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
Thermal Resistance,Junction to Ambient
MAX
62.5
UNIT
℃/W
isc website:
www.iscsemi.com
1
isc
&
iscsemi
is registered trademark
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