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BD912I

Description
Bipolar Transistors;PNP;-10A;-100V;TO-251
CategoryDiscrete semiconductor   
File Size202KB,2 Pages
ManufacturerInchange Semiconductor
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BD912I Overview

Bipolar Transistors;PNP;-10A;-100V;TO-251

isc
Silicon PNP Power Transistor
DESCRIPTION
·DC
Current Gain -
: h
FE
= 40@ I
C
= -
0.5A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= -100V(Min)
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-100
-100
-5
-10
-5
30
150
-65~150
UNIT
V
V
V
A
A
W
BD912I
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
4.2
UNIT
℃/W
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www.iscsemi.com
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