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FQU10N20

Description
MOSFETs;7.6A;200V;IPAK/TO-251
CategoryDiscrete semiconductor   
File Size240KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet View All

FQU10N20 Overview

MOSFETs;7.6A;200V;IPAK/TO-251

isc N-Channel MOSFET Transistor
·FEATURES
·Drain
Source Voltage-
: V
DSS
= 200V(Min)
·Low
On-Resistance
: R
DS(on)
= 0.36Ω(Max)
·100%
Avalanche Tested
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power
factor correction
·Switched
mode power supplies
·Uninterruptible
Power Supply
·ABSOLUTE
MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
I
DM
P
D
T
j
T
stg
Drain-Source Voltage
Gate-Source Voltage-Continuous
Drain Current-Continuous
Drain Current-Single Plused
Total Dissipation @T
C
=25℃
Max. Operating Junction Temperature
Storage Temperature
PARAMETER
FQU10N20
VALUE
200
±30
7.6
30
55
150
-55~150
UNIT
V
V
A
A
W
·THERMAL
CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
2.27
UNIT
℃/W
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www.iscsemi.com
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