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KSH44H11I

Description
Bipolar Transistors;NPN;8A;80V;TO-251
CategoryDiscrete semiconductor   
File Size209KB,2 Pages
ManufacturerInchange Semiconductor
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KSH44H11I Overview

Bipolar Transistors;NPN;8A;80V;TO-251

INCHANGE Semiconductor
isc
Silicon NPN Power Transistor
KSH44H11I
DESCRIPTION
·Straight
lead(IPAK,“-I”suffix)
·Electrically
similar to popular KSE44H
·Fast
switching speed
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching
regulators
·Power
amplifier
·Converters
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CEO
V
EBO
I
C
I
CP
PARAMETER
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Total Power Dissipation
@ Ta=25℃
Total Power Dissipation
@ T
C
=25℃
MAX.Junction Temperature
Storage Temperature Range
VALUE
80
5
8
16
1.75
W
20
150
-65~150
UNIT
V
V
A
A
P
C
T
J
T
stg
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark

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