INCHANGE Semiconductor
isc
Silicon NPN Power Transistor
KSH44H11I
DESCRIPTION
·Straight
lead(IPAK,“-I”suffix)
·Electrically
similar to popular KSE44H
·Fast
switching speed
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching
regulators
·Power
amplifier
·Converters
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CEO
V
EBO
I
C
I
CP
PARAMETER
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Total Power Dissipation
@ Ta=25℃
Total Power Dissipation
@ T
C
=25℃
MAX.Junction Temperature
Storage Temperature Range
VALUE
80
5
8
16
1.75
W
20
150
-65~150
℃
UNIT
V
V
A
A
P
C
T
J
T
stg
℃
isc website
:
www.iscsemi.com
1
isc & iscsemi
is registered trademark
INCHANGE Semiconductor
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO *
V
CE
(sat)
V
BE
(sat)
I
CEO
I
EBO
h
FE1
h
FE2
f
T
C
OB
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
Output Capacitance
CONDITIONS
I
C
= 30mA; I
B
= 0
I
C
=8A; I
B
= 400mA
I
C
=8A; I
B
= 800mA
V
CE
= 80V; I
E
= 0
V
EB
= 5V; I
C
= 0
I
C
= 2A; V
CE
= 1V
I
C
= 4A; V
CE
= 1V
I
C
= 0.5A; V
CE
= 10V
I
E
= 0 ; V
CB
= 10V,f
test
= 1MHz
60
40
MIN
80
KSH44H11I
TYP
MAX
UNIT
V
1.0
1.5
10
50
V
V
uA
uA
50
130
MHz
pF
*:Pulse
test
PW≤300us,duty
cycle≤2%
isc website
:
www.iscsemi.com
2
isc & iscsemi
is registered trademark