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BAR88

Description
80 V, SILICON, PIN DIODE
Categorysemiconductor    Discrete semiconductor   
File Size474KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BAR88 Overview

80 V, SILICON, PIN DIODE

BAR88...
Silicon PIN Diode
Optimized for low current antenna switches
in hand held applications
Very low forward resistance
(typ. 1.5
@
I
F
= 1 mA)
Low capacitance at zero volt reverse bias
at frequencies above 1 GHz (typ. 0.28 pF)
Very low signal distortion
BAR88-02L
BAR88-02V
BAR88-07L4
4
3
BAR88-099L4
4
3
1
2
D 1
D 2
D 1
D 2
1
2
1
2
Type
BAR88-02L
BAR88-02V
BAR88-07L4*
BAR88-099L4*
Package
TSLP-2-1
SC79
TSLP-4-4
TSLP-4-4
Configuration
single, leadless
single
parallel pair, leadless
anti-parallel pair, leadless
L
S
(nH)
0.4
0.6
0.4
0.4
Marking
UU
U
UT
US
* Preliminary Data
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Total power dissipation
BAR88-02L, -07L4, -099L4
T
s
133°C
BAR88-02V,
T
s
123°C
Junction temperature
Operating temperature range
Storage temperature
T
j
T
op
T
stg
Symbol
V
R
I
F
P
tot
250
250
150
-55 ... 125
-55 ... 150
°C
Value
80
100
Unit
V
mA
mW
1
Dec-08-2003

BAR88 Related Products

BAR88 BAR88-02L BAR88-099L4 BAR88-07L4
Description 80 V, SILICON, PIN DIODE 80 V, SILICON, PIN DIODE 80 V, SILICON, PIN DIODE 80 V, SILICON, PIN DIODE
Is it Rohs certified? - conform to conform to incompatible
Maker - Infineon Infineon Infineon
Parts packaging code - DFN DFN DFN
package instruction - LEADLESS, TSLP-2 LEADLESS, TSLP-4 LEADLESS, TSLP-4
Contacts - 2 4 4
Reach Compliance Code - compliant compliant unknown
ECCN code - EAR99 EAR99 EAR99
Other features - LOW DISTORTION LOW DISTORTION LOW DISTORTION
application - SWITCHING SWITCHING SWITCHING
Minimum breakdown voltage - 80 V 80 V 80 V
Configuration - SINGLE SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Maximum diode capacitance - 0.4 pF 0.4 pF 0.4 pF
Diode component materials - SILICON SILICON SILICON
Maximum diode forward resistance - 2.5 Ω 2.5 Ω 2.5 Ω
Diode type - PIN DIODE PIN DIODE PIN DIODE
frequency band - L BAND L BAND L BAND
JESD-30 code - R-XBCC-N2 R-XBCC-N4 R-XBCC-N4
Minority carrier nominal lifetime - 0.5 µs 0.5 µs 0.5 µs
Number of components - 1 2 2
Number of terminals - 2 4 4
Maximum operating temperature - 125 °C 125 °C 125 °C
Package body material - UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - CHIP CARRIER CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation - 0.25 W 0.25 W 0.25 W
Certification status - Not Qualified Not Qualified Not Qualified
Reverse test voltage - 5 V 60 V 60 V
surface mount - YES YES YES
technology - POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE
Terminal form - NO LEAD NO LEAD NO LEAD
Terminal location - BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches - 1 1 1

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