Preliminary PTF 080901
LDMOS RF Power Field Effect Transistor
90 W, 860–960 MHz
Description
The PTF 080901 is a 90–W, internally matched
GOLDMOS
FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
Key Features
•
•
Broadband internal matching
Typical EDGE performance
- Average output power = 45 W
- Gain = 18 dB
- Efficiency = 40%
Typical CW performance
- Output power at P–1dB = 120 W
- Gain = 17 dB
- Efficiency = 60%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
90 W (CW) output power
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ
= 700 mA, f = 959.8 MHz
0
55
Efficiency
50
•
Modulation Spectrum (dB)
-10
-20
-30
-40
-50
-60
-70
-80
-90
36
38
40
42
44
400 kHz
•
Drain Efficiency (%)
45
40
35
30
25
20
600 kHz
46
48
50
15
10
•
•
•
PTF080901A/E
Package 20248(A)/30248(E)
Output Power (dBm)
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
Two–Tone Measurements
(in Infineon test fixture)
PTF080901C/F
Package 21248(C)/31248(F)
V
DD
= 28 V, I
DQ
= 700 mA, P
OUT
= 90 W PEP, f
C
= 960 MHz, tone spacing = 1000 kHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
η
D
IMD
Min
—
—
—
Typ
18
42
–32
Max
—
—
–29
Units
dB
%
dBc
EDGE Measurements
(in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 700 mA, P
OUT
= 45 W, f = 959.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 KHz
Modulation Spectrum @ 600 KHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
η
D
Min
—
—
—
—
—
Typ
2.5
–62
–74
18
40
Max
—
—
—
—
—
Units
%
dBc
dBc
dB
%
Preliminary Data Sheet
1
2003-11-06
Preliminary PTF 080901
Electrical Characteristics
at T
CASE
= 25°C unless otherwise indicated (Guaranteed)
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, I
DS
= 1 A
V
DS
= 28 V, I
DQ
= 700 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.5
—
Typ
—
—
0.1
3.2
—
Max
—
1.0
—
4
1.0
Units
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C) PTF080901A/C
Thermal Resistance (T
CASE
= 70°C) PTF080901E/F
T
STG
R
θJC
R
θJC
PTF080901E/F
P
D
PTF 080901A/C
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
269
1.54
335
1.9
–40 to +150
0.65
0.52
Unit
V
V
°C
W
W/°C
W
W/°C
°C
°C/W
°C/W
Preliminary Data Sheet
2
2003-11-06
Preliminary PTF 080901
Typical Performance
(measurements taken in production test fixture.)
otherwise indicated.
All published data at T
CASE
= 25°C unless
Modulation Spectrum
P
OUT
= 40 W, f = 959.8 MHz
2.1
-20
EVM
EDGE EVM Performance
V
DD
= 28 V, I
DQ
= 700 mA, f = 959.8 MHz
9
8
90
80
EVM RMS (Average %)
.
EVM RMS (average %)
.
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
0.47
-30
Modulation Spectrum
(dBc)
-40
400 KHz
-50
-60
-70
600 KHz
-80
-90
-100
0.97
6
5
4
3
2
1
0
36
38
40
42
44
46
48
50
EVM
Efficiency
60
50
40
30
20
10
0
0.57
0.67
0.77
0.87
Quiescent Current (A)
Output Power (dBm)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V
DD
= 28 V, I
DQ
= 650 mA, f
1
= 959 MHz, F
2
= 960 MHz
0
-10
-20
Typical P
OUT
, Gain & Efficiency (at P-1dB)
vs. Frequency
V
DD
= 28 V, I
DQ
= 650 mA
18
80
17
Gain
70
IMD (dBc)
-30
-40
-50
-60
-70
-80
43
45
3rd Order
16
Efficiency
60
5th
15
Output Pow er
50
7th
14
860
880
900
920
940
40
960
47
49
51
Output Power (dBm), PEP
Frequency (MHz)
Preliminary Data Sheet
3
2003-11-06
Eff. (%), POUT (W)
Gain (dB)
Drain Efficiency (%)
7
70
Preliminary PTF 080901
Typical Performance
(cont.) All published data at T
CASE
= 25°C unless otherwise indicated.
IM3 vs. Output Power at Selected Biases
V
DD
= 28 V, f
1
= 959, f
2
= 960 MHz
-20
Broadband Performance
V
DD
= 28 V, I
DQ
= 700 mA, P
OUT
= 45 W
60
0
Efficiency
50
40
30
20
Gain
10
860
Return Loss
-3
-6
-9
-12
-15
960
IMD (dBc)
-35
-40
-45
-50
-55
-60
39
41
43
45
47
49
51
837.5 mA
670 mA
880
900
920
940
Output Power (dBm), PEP
Frequency (MHz)
Power Sweep
V
DD
= 28 V
20
I
DQ
= 700 mA
I
DQ
= 350 mA
18
20
19
18
17
16
15
14
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 700 mA, f = 960 MHz
70
Gain
60
50
40
30
Efficiency
20
10
130
Power Gain (dB)
19
17
I
DQ
= 175 mA
16
38
40
42
44
46
48
50
52
10
30
50
70
90
110
Output Power (dBm)
Output Power (dBm)
Preliminary Data Sheet
4
2003-11-06
Drain Efficiency (%)
Gain (dB)
Return Loss (dB)
-30
502.5 mA
Gain (dB), Efficiency (%)
-25
Preliminary PTF 080901
Typical Performance
(cont.)
All published data at T
CASE
= 25°C unless otherwise indicated.
Output Power
(at 1 dB Compression)
vs. Supply Voltage
I
DQ
= 700 mA, f = 960 MHz
52.0
60
50
IS-95 CDMA Performance
V
DD
= 28 V, I
DQ
= 700 mA, f = 880 MHz
-40
-45
ACP F
C
– 0.75 MHz
-50
-55
Efficiency
20
10
ACPR F
C
+ 1.98 MHz
-60
-65
-70
40
41
42
43
44
45
51.5
40
30
51.0
50.5
50.0
24
26
28
30
32
0
Supply Voltage (V)
Output Power (dBm), Avg.
Three–Carrier CDMA 2000 Performance
V
DD
= 28 V, I
DQ
= 700 mA, f = 880 MHz
50
ACPU
45
-45
Bias Voltage vs. Temperature
Voltage normalized to 1.0 V. Series show current.
1.03
1.02
1.50 A
3.00 A
4.50 A
1.01
1.00
0.99
0.98
0.97
6.00 A
7.50 A
9.00 A
Drain Efficiency (%)
Adjacent Channel
Power Ration (dB)
ACP
40
35
30
25
20
15
10 12 14 16 18 20 22 24 26 28 30
Efficiency
ALTU
-55
-60
Bias Voltage (V)
-50
-65
0.96
-20
0
20
40
60
80
100
Output Power (dBm), Avg
Case Temperature (ºC)
Preliminary Data Sheet
5
2003-11-06
Adjacent Channel Power
Ration (dB)
Output Power (dBm)
Drain Efficiency (%)
京公网安备 11010802033920号
EEWORLD
