PTFC261402FC
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
140 W, 28 V, 2620 – 2690 MHz
Description
The PTFC261402FC is a 140-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 2620
to 2690 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTFC261402FC
Package H-37248-4
Features
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 900 mA, ƒ = 2620 MHz
3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
24
•
•
•
60
40
20
0
Broadband internal matching
Wide video bandwidth
Typical pulsed CW performance, 2655 MHz, 28 V
(combined outputs)
- Output power at P
1dB
= 140 W
- Efficiency = 50%
- Gain = 16.5 dB
Typical single-carrier WCDMA performance, 2655
MHz, 28 V
- Output power = 46 dBm avg
- Gain = 17.5 dB
- Efficiency = 30.5%
Capable of handling 10:1 VSWR @ 28 V, 140 W
(CW) output power
Integrated ESD protection
Low thermal resistance
Pb-free and RoHS compliant
Peak/Average (dB), Gain (dB)
Efficiency
Gain
20
16
12
Efficiency (%)
•
PAR @ 0.01% CCDF
8
4
0
33
38
43
48
c261402fc_gr1
-20
-40
-60
•
•
•
•
53
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(combined outputs)
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 28 W avg, ƒ = 2655 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
G
ps
Min
17
23.5
—
Typ
18
25
–34
Max
—
—
–31
Unit
dB
%
dBc
η
D
ACPR
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
– DRAFT ONLY
1 of 10
Rev. 04, 2013-02-04
PTFC261402FC
Confidential, Limited Internal Distribution
DC Characteristics
(each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V(
BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
—
—
Typ
—
—
—
0.1
2.5
—
Max
—
1
10
—
—
1
Unit
V
µA
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 900 mA
V
GS
= 10 V, V
DS
= 0 V
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 140 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
θ
JC
Value
65
–6 to +10
200
–65 to +150
0.30
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFC261402FC V1
PTFC261402FC V1 R250
Order Code
PTFC261402FCV1XWSA1
PTFC261402FCV1R250XTMA1
Package and Description
Thermally-enhanced earless flange, push-pull
Thermally-enhanced earless flange, push-pull
Shipping
Tray
Tape & Reel, 250 pcs
Pinout Diagram
Gate
Drain
G1
D1
Gate
Drain
G2
D2
Source
(flange)
H - 72484_pd_3- 23- 010
3 -
0
2
Lead connections for PTFC261402FC
Data Sheet
– DRAFT ONLY
2 of 10
Rev. 04, 2013-02-04
PTFC261402FC
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 900 mA, ƒ = 2655 MHz
3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
24
60
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 900 mA, ƒ = 2690 MHz
3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
24
Peak/Average (dB), Gain (dB)
20
16
12
Gain
40
Peak/Average (dB), Gain (dB)
Efficiency
Efficiency
Gain
60
40
20
0
20
16
12
Efficiency (%)
20
0
PAR @ 0.01% CCDF
8
4
0
33
38
43
48
c261402fc_g r2
PAR @ 0.01% CCDF
8
4
0
33
38
43
48
c261402fc_gr3
-20
-40
-60
-20
-40
-60
53
53
Average Output Power (dBm)
Average Output Power (dBm)
Single-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 900 mA,
3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
-10
2620 MHz
2655 MHz
2690 MHz
50
19
18
Single-carrier WCDMA
Broadband Performance
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 50 dBm,
3GPP WCDMA signal, 7.5 dB PAR
49
Drain Efficiency (%)
48
47
Efficiency
Drain Efficiency(%)
-20
40
ACPR (dB)
17
Gain (dB)
-30
30
16
46
Gain
-40
Efficiency
ACP Up
ACP Low
c261402fc_gr5
20
15
14
13
2570
c261402fc_gr8
45
44
43
2610
2650
2690
2730
-50
10
-60
33
38
43
48
0
53
Average Output Power (dBm)
Frequency (MHz)
Data Sheet
– DRAFT ONLY
3 of 10
Rev. 04, 2013-02-04
Efficiency (%)
PTFC261402FC
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Single-carrier WCDMA
Broadband Performance
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 50 dBm,
3GPP WCDMA signal, 7.5 dB PAR
-5
-5
19
18
Single-carrier WCDMA
Broadband Performance
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 49 dBm,
3GPP WCDMA signal, 7.5 dB PAR
47
46
45
44
43
Efficiency
c261402f c_gr10
Return Loss
-10
-10
Return Loss (dB)
Gain
ACP Up (dBc)
-15
-20
-25
-30
2570
-15
-20
17
16
15
14
2570
ACP Up
-25
-30
2730
c 261402f c_gr9
42
2610
2650
2690
2610
2650
2690
2730
Frequency (MHz)
Frequency (MHz)
Single-carrier WCDMA
Broadband Performance
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 49 dBm,
3GPP WCDMA signal, 7.5 dB PAR
-5
-10
-5
-10
Single-carrier WCDMA
Broadband Performance
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 48 dBm,
3GPP WCDMA signal, 7.5 dB PAR
19
18
47
45
43
41
Efficiency
Efficiency (%)
Gain
ACP Up (dBc)
Return Loss
-15
-20
-25
-30
2570
-15
-20
-25
-30
2730
Return Loss (dB)
Gain (dB)
17
16
15
14
2570
ACP Up
c261402f c_gr11
39
37
c261402f c_gr12
2610
2650
2690
2610
2650
2690
2730
Frequency (MHz)
Frequency (MHz)
Data Sheet
– DRAFT ONLY
4 of 10
Rev. 04, 2013-02-04
Efficiency (%)
Gain (dB)
PTFC261402FC
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
CW Performance
V
DD
= 28 V, I
DQ
= 900 mA
Single-carrier WCDMA
Broadband Performance
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 48 dBm,
3GPP WCDMA signal, 7.5 dB PAR
-5
-5
20
19
60
Return Loss
-10
-10
Gain
50
40
Return Loss (dB)
ACP Up (dBc)
Gain (dB)
-15
-20
-25
-15
-20
18
30
17
Efficiency
16
15
2620 MHz
2655 MHz
2690 MHz
c261402f c_gr14
20
10
0
ACP Up
-25
-30
2730
-30
2570
c261402fc_gr13
2610
2650
2690
33 35 37 39 41 43 45 47 49 51 53
Frequency (MHz)
Output Power (dBm)
CW Performance
at selected V
DD
, (single side)
I
DQ
= 900 mA, ƒ = 2620 MHz
20
19
V
DD
= 32 V
V
DD
= 28 V
V
DD
= 24 V
55
45
CW Performance
at selected V
DD
, (single side)
I
DQ
= 900 mA, ƒ = 2655 MHz
20
19
V
DD
= 32 V
V
DD
= 28 V
V
DD
= 24 V
60
50
40
18
30
17
16
15
34
36
38
40
42
44
46
48
50
Gain
Efficiency (%)
18
35
Gain
17
16
15
34
36
38
40
42
44
46
48
50
25
15
5
Efficiency
20
10
c261402f c_gr16
Efficiency
c261402f c_gr15
0
52
52
Output Power (dBm)
Output Power (dBm)
Data Sheet
– DRAFT ONLY
5 of 10
Rev. 04, 2013-02-04
Efficiency (%)
Gain (dB)
Gain (dB)
Efficiency (%)
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