PTFC262808FV
Thermally-Enhanced High Power RF LDMOS FET
280 W, 28 V, 2620 – 2690 MHz
Description
The PTFC262808FV is a 280-watt LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 2620 to
2690 MHz frequency band. Features include input and output match-
ing, high gain and thermally-enhanced package. Manufactured with
Infineon's advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
PTFC262808FV
Package H-37275G-6/2
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 1800 mA, ƒ = 2690 MHz, 3GPP
WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
20
50
Features
•
•
Broadband internal matching
Typical 1-carrier WCDMA performance, 2655 MHz,
28 V, 10 dB PAR
- Output power at P
1dB
= 56 W avg.
- Efficiency = 24%
- Gain = 18 dB
- ACPR = –33 dBc @ 3.84 MHz
Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
Low thermal resistance
RoHS-compliant
Capable of handling 10:1 VSWR at 28 V, 280 W
(CW) ouput power
Efficiency
Drain Efficiency (%)
19
40
Gain (dB)
18
17
16
15
30
Gain
30
20
10
0
•
•
•
•
c262808fv-gr1
34
38
42
46
50
54
Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Infineon production test fixture)
V
DD
= 28 V, I
DQ
= 1800 mA, P
OUT
= 56 W average, ƒ = 2655 MHz, 3GPP WCDMA signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
G
ps
Min
16.5
22
—
Typ
18.0
24
–33
Max
—
—
–30
Unit
dB
%
dBc
η
D
ACPR
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 02.2, 2013-08-06
PTFC262808FV
DC Characteristics
(single side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
—
—
Typ
—
—
—
0.05
2.6
—
Max
—
1.0
10.0
—
—
1
Unit
V
µA
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 1.45 A
V
GS
= 10 V, V
DS
= 0 V
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 200 W CW)
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
R
θ
JC
Value
65
–6 to +10
0 to +32
200
–65 to +150
0.20
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFC 262808FV V1
PTFC 262808FV V1 R250
Order Code
PTFC262808FVV1XWSA1
PTFC262808FVV1R250XTMA1
Package and Description
H-37275G-6/2, ceramic open-cavity, earless
H-37275G-6/2, ceramic open-cavity, earless
Shipping
Tray
Tape & Reel, 250 pcs
Data Sheet
2 of 8
Rev. 02.2, 2013-08-06
PTFC262808FV
Typical Performance
(data taken in Infineon production test fixture)
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 1800 mA, ƒ = 2690 MHz, 3GPP
WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
60
-15
IMD Low
IMD Up
ACPR
Efficiency
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 1800 mA,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
IMD (dBc), ACPR (dBc)
-35
-40
-45
-50
30
34
38
42
46
50
c262802fv-gr2
30
20
10
0
IMD (dBc)
-30
40
Drain Efficiency (%)
-25
50
-25
2620 MHz
2655 MHz
2690 MHz
-35
IMD Up
IMD Low
-45
30
34
38
42
46
50
c262802fv-gr3
54
54
Output Power (dBm)
Output Power (dBm)
Pulsed CW Performance
Gain & Input Return Loss, single side
V
DD
= 28 V, I
DQ
= 650 mA
20
0
19
Pulsed CW Performance
V
DD
= 28 V, I
DQ
= 1.8 A
55
IRL
Input Return Loss (dB)
19
-5
-10
Power Gain (dB)
18
Gain
45
35
25
15
18
17
16
15
14
2450
c262802fv-gr6
17
16
15
Gain
-15
-20
-25
-30
2850
2620 MHz
2655 MHz
2690 MHz
Efficiency
14
36
40
44
48
52
c262802fv-gr4
5
2550
2650
2750
56
Frequency (MHz)
Output Power (dBm)
Data Sheet
3 of 8
Rev. 02.2, 2013-08-06
Efficiency (%)
Gain (dB)
PTFC262808FV
Reference Circuit, tuned for 2620 – 2690 MHz
DUT
Test Fixture Part No.
PCB
PTFC262808FV
LTN/PTFC262808FV V1
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper,
ε
r
= 3.66
Find Gerber files for this test fixture on the Infineon Web site at (http://www.infi
neon.com/rfpower)
R802
C801
RO4350, .020 (60)
C802
R803
S1
S2
S3
R804
R101
RO4350, .020 (60)
V
DD
C208
C205
C207
R104
R801
R102
C206
C108
C106
C102
PTFC262808FV
RF_IN
C104
C103
C201
RF_OUT
C107
C101
C209
C202
C204
C203
R103
C105
R105
V
DD
PTFC262808FV_IN_02
Reference circuit assembly diagram (not to scale)
PTFC262808FV_OUT_02
c 28 2 8 08 f v _c d_ 7 -1 9 - 13
Component Information
Component
Input
C101, C102
C103, C104
C105, C106
C107, C108
C801, C802, C803
R101, R102
Chip capacitor, 10 pF
Chip capacitor, 18 pF
Chip capacitor, 0.4 pF
Capacitor, 10 µF
Chip capacitor, 1,000 pF
Resistor, 10
Ω
ATC
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ATC
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Description
Suggested Manufacturer
P/N
(
table cont. next page)
Data Sheet
5 of 8
Rev. 02.2, 2013-08-06
Microcontroller MCU
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