PTFC262808SV
Thermally-Enhanced High Power RF LDMOS FET
280 W, 28 V, 2620 – 2690 MHz
Description
The PTFC262808SV is a 280-watt LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 2620 to
2690 MHz frequency band. Features include input and output match-
ing, high gain and thermally-enhanced package. Manufactured with
Infineon's advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
PTFC262808SV
Package H-37275G-6/2
with formed leads
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 1800 mA, ƒ = 2690 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
19
18
17
40
Features
•
•
Broadband internal matching
Typical CW pulsed performance, 2620 MHz, 28 V
- Output power at P
1dB
= 280 W
- Efficiency = 52%
- Gain = 18 dB
Typical 1-carrier WCDMA performance, 2655 MHz,
28 V
- Output power at P
1dB
= 56 W avg.
- Efficiency = 24%
- Gain = 18.0 dB
Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
Low thermal resistance
RoHS-compliant
Capable of handling 10:1 VSWR at 28 V, 280 W
(CW) ouput power
30
25
16
Efficiency
15
14
13
38
40
42
44
46
48
50
c262808sv-gr1
Drain Efficiency (%)
Gain
35
•
Gain (dB)
20
15
10
•
•
•
•
52
Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Infineon production test fixture)
V
DD
= 28 V, I
DQ
= 1800 mA, P
OUT
= 56 W average, ƒ = 2655 MHz, 3GPP WCDMA signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
G
ps
Min
16.5
22
—
Typ
18.0
24
–33
Max
—
—
–30
Unit
dB
%
dBc
η
D
ACPR
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 02.1, 2013-08-02
PTFC262808SV
Typical Performance
(data taken in a reference design fixture)
Pulsed CW Performance
(gain and input return loss)
V
DD
= 28 V, I
DQ
= 650 mA
19
0
Pulsed CW Performance
V
DD
= 28 V, I
DQ
= 1.8 A
20
60
50
40
30
2620 MHz
2655 MHz
2690 MHz
c262808s v-gr5
Input Return Loss (dB)
-5
Power Gain (dB)
Gain (dB)
-15
17
-20
-25
16
-30
18
17
16
Gain
Gain
c262808sv-gr7
-35
20
10
Efficiency
15
44
46
48
50
15
-40
2300 2400 2500 2600 2700 2800 2900 3000
52
54
56
Frequency (MHz)
Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 1800 mA,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
-25
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 1800 mA, ƒ = 2690 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
40
IMD (dBc), ACPR (dBc)
IMD (dBc)
-30
-35
-40
-45
38
40
42
44
46
48
50
-30
-35
-40
-45
-50
38
40
30
25
20
15
c262808sv-gr2
IMD Up
IMD Low
c262808sv-gr3
52
10
42
44
46
48
50
52
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 8
Rev. 02.1, 2013-08-02
Drain Efficiency (%)
2620 MHz
2655 MHz
2690 MHz
-25
IM3L
IM3U
ACPR
Eff
35
Efficiency (%)
18
IRL
-10
19
PTFC262808SV
Reference Circuit, tuned for 2620 – 2690 MHz
DUT
Test Fixture Part No.
PCB
PTFC262808SV
LTN/PTFC262808SV V1
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper,
ε
r
= 3.66
Find Gerber files for this test fixture on the Infineon Web site at (http://www.infi
neon.com/rfpower)
R802 C801 C803
R801
S1
R107
R108
R109
C103
C102
S3
R103
RO4350, .020
R803
(60)
C802
S2
R804
R102
RO4350, .020 (60)
C202 C206
C205
C207
V
DD
C105
C101
C107
C201
C212
C203
C204
RF_IN
C106
C104
R104
C108
R101
C209
C211
C210
C208
PTFC262808SV_IN_1A
PTFC262808SV_OUT_01
c 28 2 8 08 s v _c d_ 6 - 28 - 13
Reference circuit assembly diagram (not to scale)
Component Information
Component
Input
C101, C102, C107, C108
C103, C104
C105
C106
C801, C802, C803
R101, R102
Chip capacitor, 18 pF
Capacitor, 10 µF
Chip capacitor, 0.4 pF
Chip capacitor, 0.7 pF
Chip capacitor, 1,000 pF
Resistor, 10
Ω
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Description
Suggested Manufacturer
Data Sheet
5 of 8
+
PTFC262808SV
RF_OUT
V
DD
+
P/N
(
table cont. next page)
Rev. 02.1, 2013-08-02
Microcontroller MCU
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