Photo Transistor, 850nm, 0.05A I(C)
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Infineon |
| Reach Compliance Code | _compli |
| Maximum dark power | 100 nA |
| JESD-609 code | e0 |
| Installation features | THROUGH HOLE MOUNT |
| Maximum on-state current | 0.05 A |
| Maximum operating temperature | 100 °C |
| Minimum operating temperature | -55 °C |
| peak wavelength | 850 nm |
| Maximum power dissipation | 0.2 W |
| Maximum response time | 0.0000075 s |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |





| SFH300-2 | SFH300-4 | SFH300-3 | SFH300FA3 | |
|---|---|---|---|---|
| Description | Photo Transistor, 850nm, 0.05A I(C) | Photo Transistor, 850nm, 0.05A I(C) | Photo Transistor, 850nm, 0.05A I(C) | Photo Transistor, 900nm, 0.05A I(C) |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Maker | Infineon | Infineon | Infineon | Infineon |
| Reach Compliance Code | _compli | not_compliant | not_compliant | not_compliant |
| Maximum dark power | 100 nA | 100 nA | 100 nA | 100 nA |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Installation features | THROUGH HOLE MOUNT | THROUGH HOLE MOUNT | THROUGH HOLE MOUNT | THROUGH HOLE MOUNT |
| Maximum on-state current | 0.05 A | 0.05 A | 0.05 A | 0.05 A |
| Maximum operating temperature | 100 °C | 100 °C | 100 °C | 100 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C |
| peak wavelength | 850 nm | 850 nm | 850 nm | 900 nm |
| Maximum power dissipation | 0.2 W | 0.2 W | 0.2 W | 0.2 W |
| Maximum response time | 0.0000075 s | 0.00001 s | 0.00001 s | 0.00001 s |
| surface mount | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |