CYStech Electronics Corp.
N-Channel Logic Level Enhancement Mode Power MOSFET
Spec. No. : C092I3
Issued Date : 2015.12.14
Revised Date :
Page No. : 1/8
MTB4D0N03BI3
Features
•
Single Drive Requirement
•
Low On-resistance
•
Fast Switching Characteristic
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D @
V
GS
=10V, T
A
=25°C
I
D @
V
GS
=10V, T
C
=25°C
V
GS
=10V, I
D
=13A
R
DSON(TYP)
V
GS
=4.5V, I
D
=10A
30V
15A
50A
4.2mΩ
5.5mΩ
Equivalent Circuit
MTB4D0N03BI3
Outline
TO-251
G：Gate
D：Drain S：Source
G D S
Ordering Information
Device
MTB4D0N03BI3-0-UA-G
Package
Shipping
TO-251
80 pcs/tube, 50 tubes/box
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UA: 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTB4D0N03BI3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
GS
=10V, T
C
=25°C (silicon limit)
Continuous Drain Current @ V
GS
=10V, T
C
=25°C (package limit)
Continuous Drain Current @ V
GS
=10V, T
C
=100°C
Continuous Drain Current @ V
GS
=10V, T
A
=25°C
Continuous Drain Current @ V
GS
=10V, T
A
=70°C
Pulsed Drain Current
Single Pulse Avalanche Current
Avalanche Energy @ L=0.1mH, I
D
=37A, R
G
=25Ω
Repetitive Avalanche Energy @ L=0.05mH
T
C
=25℃
T
C
=100℃
Total Power Dissipation
T
A
=25℃
T
A
=70℃
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
Spec. No. : C092I3
Issued Date : 2015.12.14
Revised Date :
Page No. : 2/8
Limits
30
±20
56
50
35
15
12
224
*1
37
68
*3
3.6
36
14.4
2.5
*2
1.6
*2
-55~+150
Unit
V
I
D
A
I
DM
I
AS
E
AS
E
AR
P
D
P
DSM
Tj, Tstg
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
3.5
50
*2
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper. In practice R
th,j-a
will be determined by customer’s PCB characteristics.
125°C/W when mounted on a minimum pad of 2 oz. copper.
3. 100% tested by conditions of L=1mH, I
AS
=13A, V
GS
=10V, V
DD
=15V, rated 30V
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
*1
I
GSS
I
DSS
R
DS(ON)
Dynamic
Ciss
Coss
Crss
MTB4D0N03BI3
Min.
30
1
-
-
-
-
-
-
-
-
-
Typ.
-
-
25
-
-
-
4.2
5.5
1442
270
182
Max.
-
2.5
-
±
100
1
10
5.3
7.2
-
-
-
Unit
V
S
nA
μA
m
Ω
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=5V, I
D
=15A
V
GS
=
±
20V
V
DS
=24V, V
GS
=0V
V
DS
=24V, V
GS
=0V, Tj=85°C
V
GS
=10V, I
D
=13A
V
GS
=4.5V, I
D
=10A
V
DS
=15V, V
GS
=0V, f=1MHz
CYStek Product Specification
*1
pF
CYStech Electronics Corp.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Rg
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
31.5
3.6
8.7
13
18
43.8
10.6
2.2
-
-
0.84
12
4
Max.
-
-
-
-
-
-
-
-
50
224
1.2
-
-
Unit
nC
Test Conditions
Spec. No. : C092I3
Issued Date : 2015.12.14
Revised Date :
Page No. : 3/8
V
DS
=15V, V
GS
=10V, I
D
=15A
ns
Ω
V
DS
=15V, I
D
=15A, V
GS
=10V, R
GS
=3Ω
f=1MHz
A
V
ns
nC
I
S
=20A, V
GS
=0V
I
F
=20A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTB4D0N03BI3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
140
120
I
D
, Drain Current (A)
100
80
60
40
20
0
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
4V
10V,9V,8V,7V,6V
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C092I3
Issued Date : 2015.12.14
Revised Date :
Page No. : 4/8
Brekdown Voltage vs Junction Temperature
1.4
1.2
1
0.8
0.6
0.4
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
5V
3.5V
V
GS
=3V
I
D
=250
μ
A,
V
GS
=0V
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
100
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
1
Tj=25°C
0.8
0.6
0.4
0.2
Tj=150°C
10
V
GS
=4.5V
V
GS
=10V
1
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
4
8
12
16
I
DR
, Reverse Drain Current(A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
200
I
D
=13A
3.2
2.8
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
V
GS
=4.5V, I
D
=10A
R
DSON
@ Tj=25°C : 5.5 mΩ typ
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
160
120
80
40
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
2.4
2
1.6
1.2
0.8
0.4
0
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
V
GS
=10V, I
D
=13A
R
DSON
@ Tj=25°C : 4.2mΩ typ
MTB4D0N03BI3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
10000
1.4
1.2
1
0.8
0.6
0.4
5
10
15
20
25
V
DS
, Drain-Source Voltage(V)
30
-75 -50 -25
Spec. No. : C092I3
Issued Date : 2015.12.14
Revised Date :
Page No. : 5/8
Threshold Voltage vs Junction Tempearture
Capacitance---(pF)
Ciss
I
D
=1mA
1000
C
oss
I
D
=250μA
Crss
100
0
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
V
DS
=10V
10
Gate Charge Characteristics
10
V
DS
=15V
V
GS
, Gate-Source Voltage(V)
8
V
DS
=10V
6
1
4
2
V
DS
=15V
0.1
Ta=25°C
Pulsed
I
D
=15A
0.01
0.001
0
0.01
0.1
1
I
D
, Drain Current(A)
10
100
0
4
8
12
16
20
24
Qg, Total Gate Charge(nC)
28
32
Maximum Safe Operating Area
1000
R
DSON
Limited
Maximum Drain Current vs Case Temperature
70
I
D
, Maximum Drain Current(A)
10
μ
s
60
50
40
30
20
10
0
silicon limit
100
I
D
, Drain Current(A)
100
μ
s
1ms
10
1
T
C
=25°C, Tj=150°C
V
GS
=10V, R
θ
JC
=3.5°C/W
Single Pulse
10ms
100ms
1
s
DC
package limit
0.1
V
GS
=10V, R
θ
JC
=3.5°C/W
0.01
0.01
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
25
50
75
100
125
T
C
, Case Temperature(°C)
150
175
MTB4D0N03BI3
CYStek Product Specification
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