DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D122
BAS11; BAS12
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1996
1996 Sep 26
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Available in ammo-pack.
k
a
BAS11; BAS12
These packages are hermetically
sealed and fatigue free as coefficients
of expansion of all used parts are
matched.
DESCRIPTION
Rectifier diodes in cavity free
cylindrical SOD91 glass packages,
incorporating Implotec™
(1)
technology.
(1) Implotec is a trademark of Philips.
MAM196
Marking code BAS11:
S11.
Marking code BAS12:
S12.
Fig.1 Simplified outline (SOD91) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BAS11
BAS12
V
RWM
working reverse voltage
BAS11
BAS12
V
R
continuous reverse voltage
BAS11
BAS12
I
F(AV)
average forward current
averaged over any 20 ms period;
T
tp
= 75
°C;
lead length = 10 mm;
see Figs 2 and 4
averaged over any 20 ms period;
T
amb
= 30
°C;
PCB mounting
(see Fig.8); see Figs 3 and 4
I
FSM
non-repetitive peak forward current
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
t = 10
µs
square wave; f = 50 Hz;
T
amb
= 25
°C
−
−
−
300
400
350
V
V
mA
−
−
300
400
V
V
PARAMETER
repetitive peak reverse voltage
−
−
300
400
V
V
CONDITIONS
MIN.
MAX.
UNIT
−
300
mA
−
4
A
P
RRM
T
stg
T
j
repetitive peak reverse power
dissipation
storage temperature
junction temperature
−
−65
−65
75
+150
+150
W
°C
°C
1996 Sep 26
2
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
PARAMETER
forward voltage
reverse avalanche
breakdown voltage
BAS11
BAS12
I
R
t
rr
reverse current
reverse recovery time
V
R
= V
RRMmax
; see Fig.6
V
R
= V
RRMmax
; T
j
= 125
°C;
see Fig.6
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.9
V
R
= 0 V; f = 1 MHz; see Fig.7
CONDITIONS
I
F
= 300 mA; T
j
= T
jmax
; see Fig.5
I
F
= 300 mA; see Fig.5
I
R
= 0.1 mA
330
440
−
−
−
MIN.
−
−
BAS11; BAS12
TYP.
−
−
MAX.
1.0
1.1
V
V
UNIT
−
−
−
−
−
−
−
250
10
1
V
V
nA
µA
µs
C
d
diode capacitance
−
20
−
pF
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm,
see Fig.8.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
180
340
UNIT
K/W
K/W
1996 Sep 26
3
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
GRAPHICAL DATA
MGD293
BAS11; BAS12
handbook, halfpage
0.6
handbook, halfpage
0.4
MGD295
IF(AV)
(A)
IF(AV)
(A)
0.3
0.4
0.2
0.2
0.1
0
0
40
80
120
Lead length 10 mm.
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
200
160
o
C)
Ttp (
0
0
40
80
120
Device mounted as shown in Fig.8.
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
200
160
Tamb (°C)
Fig.2
Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
MGD292
MGD294
handbook, halfpage
0.5
handbook, halfpage
5
P
(W)
0.4
a=3
2.5 2 1.57
1.42
IF
(A)
4
0.3
3
0.2
2
0.1
1
0
0
0.1
0.2
0.3
0.4
IF(AV)(A)
0
0
1
2
VF (V)
3
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Solid line: T
j
= 25
°C.
Dotted line: T
j
= 150
°C.
Fig.5
Forward current as a function of forward
voltage; maximum values.
1996 Sep 26
4
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
10
2
handbook, halfpage
IR
(µA)
MGD297
handbook, halfpage
10
MGD296 - 1
Cd
(pF)
10
1
10
−1
0
50
100
150
Tj (
o
C)
200
1
10
−1
1
10
10
2
VR(V)
10
3
V
R
= V
RRMmax
.
f = 1 MHz; T
j
= 25
°C.
Fig.6
Reverse current as a function of junction
temperature; maximum values.
Fig.7
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
50
25
7
50
2
3
MGA200
Dimensions in mm.
Fig.8 Device mounted on a printed-circuit board.
1996 Sep 26
5
Not recommended for new designs
京公网安备 11010802033920号
EEWORLD
