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BAS140W

Description
0.12 A, 40 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size144KB,4 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BAS140W Overview

0.12 A, 40 V, SILICON, SIGNAL DIODE

BAS140W Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionR-PDSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.25 W
Certification statusNot Qualified
Maximum reverse current1 µA
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
Silicon Schottky Diode
BAS 140W
q
q
q
q
General purpose diodes for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
Type
Ordering Code
(tape and reel)
Q62702-A1071
Pin Configuration
1
2
A
C
Marking
Package
BAS 140W
4
SOD-323
Maximum Ratings
Parameter
Reverse voltage
Forward current
Surge forward current,
t
10 ms
Total power dissipation
T
S
113
°C
Operating temperature range
Storage temperature range
Thermal Resistance
Junction-ambient
1)
Junction-soldering point
Symbol
Values
40
120
200
250
– 55 … + 125
– 55 … + 150
Unit
V
mA
mA
mW
°C
°C
V
R
I
F
I
FSM
P
tot
T
op
T
stg
R
th JA
R
th JS
260
150
K/W
K/W
1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm
2
Cu.
Semiconductor Group
1
05.95

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BAS140W BAS140 Q62702-A1071
Description 0.12 A, 40 V, SILICON, SIGNAL DIODE 0.12 A, 40 V, SILICON, SIGNAL DIODE 0.12 A, 40 V, SILICON, SIGNAL DIODE
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