BAS16
Small Signal Diodes
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
FEATURES
♦
Silicon Epitaxial Planar Diode
Top View
.056 (1.43
)
.052 (1.33
)
♦
Fast switching diode in case SOT-23,
especially suited for automatic inser-
tion.
1
2
max. .004 (0.1)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
MECHANICAL DATA
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
Dimensions in inches and (millimeters)
Marking
A6
3
Top View
1
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Reverse Voltage
Peak Reverse Voltage
Forward Current (continuous)
Non-Repetitive Peak Forward Current
at t = 1
µs
at t = 1 ms
at t = 1 s
Power Dissipation at T
amb
= 25 °C
Junction Temperature
Storage Temperature Range
1)
Value
75
100
250
2
1
0.5
350
1)
150
–65 to +150
1)
Unit
V
V
mA
A
A
A
mW
°C
°C
V
R
V
RM
I
F
I
FSM
I
FSM
I
FSM
P
tot
T
j
T
S
Device on fiberglass substrate, see layout (SOT-23).
4/98
BAS16
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Forward Voltage
at I
F
= 1 mA
at I
F
= 10 mA
at I
F
= 50 mA
at I
F
= 150 mA
Leakage Current
at V
R
= 25 V, T
j
= 150 °C
at V
R
= 75 V
at V
R
= 75 V, T
j
= 150 °C
Capacitance
at V
R
= 0; f = 1 MHz
Reverse Recovery Time
from I
F
= 10 mA to I
R
= 10 mA
I
R
= 1 mA, R
L
= 100
Ω
Thermal Resistance
Junction to Ambient Air
1)
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
–
Max.
715
855
1000
1250
30
1
50
2
6
Unit
mV
mV
mV
mV
µA
µA
µA
pF
ns
V
F
V
F
V
F
V
F
I
R
I
R
I
R
C
tot
t
rr
BAS16
R
thJA
–
–
430
1)
K/W
K/W
Device on fiberglass substrate, see layout (SOT-23).
.30 (7.5)
.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
.59 (15)
.47 (12)
.03 (0.8)
0.2 (5)
.06 (1.5)
.20 (5.1)
Dimensions in inches (millimeters)
Layout for R
thJA
test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
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