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BAS16-T3

Description
SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size46KB,3 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
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BAS16-T3 Overview

SIGNAL DIODE

BAS16-T3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWon-Top Electronics Co., Ltd.
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.855 V
JESD-609 codee0
Maximum non-repetitive peak forward current2 A
Number of components1
Maximum operating temperature150 °C
Maximum output current0.2 A
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
WTE
POWER SEMICONDUCTORS
BAS16
SURFACE MOUNT FAST SWITCHING DIODE
Features
!
!
!
High Conductance
A
L
Fast Switching
Surface Mount Package Ideally Suited for
Automatic Insertion
!
For General Purpose and Switching
B
!
Plastic Material – UL Recognition Flammability
Classification 94V-O

TOP VIEW
C
M
E
H
D
Dim
A
B
C
D
E
G
H
J
K
L
M
SOT-23
Min
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.013
0.89
0.45
0.076
Max
0.51
1.40
2.50
1.05
0.61
2.05
3.05
0.15
1.10
0.61
0.178
Mechanical Data
!
!
!
!
!
!
Case: SOT-23, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.008 grams (approx.)
Mounting Position: Any
Marking: A6
K
J
G
TOP VIEW
All Dimensions in mm
Maximum Ratings
@T
A
=25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Peak Forward Surge Current (Note 1)
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t < 1.0µs
Symbol
V
RM
V
RRM
V
RWM
V
R
I
F
I
O
I
FSM
P
d
R
JA
T
j
, T
STG
Value
100
75
300
200
2.0
350
357
-65 to +150
Unit
V
V
mA
mA
A
mW
°C/W
°C
Electrical Characteristics
@T
A
=25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
Symbol
V
(BR)R
V
F
I
R
C
j
t
rr
Min
75
Max
0.855
1.0
2.0
6.0
Unit
V
V
µA
pF
nS
Test Condition
@ I
RS
= 100µA
@ I
F
= 10mA
@ V
R
= 75V
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 10mA,
I
RR
= 0.1 x I
R
, R
L
= 100
Note: 1. Device mounted on fiberglass substrate 40 x 40 x 1.5mm.
BAS16
1 of 3
© 2002 Won-Top Electronics
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