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BAS16LT1

Description
RECTIFIER DIODE,75V V(RRM),SOT-23
CategoryDiscrete semiconductor    diode   
File Size48KB,2 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
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BAS16LT1 Overview

RECTIFIER DIODE,75V V(RRM),SOT-23

BAS16LT1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instructionR-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.715 V
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Maximum non-repetitive peak forward current0.5 A
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.225 W
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
LESHAN RADIO COMPANY, LTD.
Switching Diode
3
CATHODE
1
ANODE
BAS16LT1
3
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
75
200
500
Unit
1
Vdc
mAdc
mAdc
2
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
DEVICE MARKING
BAS16LT1 = A6
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R
θJA
T
J
, T
stg
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted)
Characteristic
Symbol
I
R
V
(BR)
V
F
C
D
V
FR
t
rr
Q
S
–-
715
855
1000
1250
2.0
1.75
6.0
45
pF
Vdc
ns
pC
75
1.0
50
30
Vdc
mV
Min
Max
Unit
µAdc
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 75Vdc)
(V
R
= 75 Vdc, T
J
= 150°C)
(V
R
= 25 Vdc, T
J
= 150°C)
Reverse Breakdown Voltage
(I
BR
= 100
µAdc)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Recovery Voltage
(I
F
= 10 mAdc, t
r
= 20ns )
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, R
L
= 50
Ω)
Stored Charge
(I
F
= 10 mAdc to V
R
= 5.0Vdc, R
L
= 500
Ω)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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