DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAS17
Low-voltage stabistor
Product specification
Supersedes data of 1996 Mar 20
1999 May 31
Philips Semiconductors
Product specification
Low-voltage stabistor
FEATURES
•
Low-voltage stabilization
•
Forward voltage range:
580 to 960 mV
•
Total power dissipation:
max. 250 mW.
APPLICATIONS
•
Low-voltage stabilization e.g.
– Bias stabilizer in class-B output
stages
– Clipping
– Clamping
– Meter protection.
DESCRIPTION
Low-voltage stabilization diode in a
small SOT23 plastic package.
Marking code:
A91.
handbook, halfpage
2
BAS17
PINNING
PIN
1
2
3
anode
not connected
cathode
DESCRIPTION
1
2
n.c.
3
3
MAM185
1
Fig.1 Simplified outline (SOT23), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C
CONDITIONS
−
−
−
−65
−
MIN.
5
200
250
+150
150
MAX.
V
mA
mW
°C
°C
UNIT
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
see Fig.2
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 5 mA
I
F
= 10 mA
I
F
= 100 mA
I
R
r
dif
S
F
C
d
1999 May 31
reverse current
differential resistance
temperature coefficient
diode capacitance
V
R
= 4 V
I
F
= 0.5 mA
I
F
= 2 mA
I
F
= 1 mA
V
R
= 0 V; f = 1 MHz
2
580
665
725
750
870
−
−
−
−
−
−
−
−
−
−
−
120
80
−1.8
−
660
745
805
830
960
5
−
−
−
140
mV
mV
mV
mV
mV
µA
Ω
Ω
mV/K
pF
MIN.
TYP.
MAX.
UNIT
Philips Semiconductors
Product specification
Low-voltage stabistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a FR4 printed-circuit board.
GRAPHICAL DATA
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
330
500
BAS17
UNIT
K/W
K/W
10
2
handbook, halfpage
IF
(mA)
(1)
(2)
MBG517
10
1
10
−1
0.5
T
j
= 25
°C.
(1) Minimum values.
(2) Maximum values.
0.75
VF (V)
1.0
Fig.2
Forward current as a function of forward
voltage.
1999 May 31
3
Philips Semiconductors
Product specification
Low-voltage stabistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
BAS17
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 May 31
4
Philips Semiconductors
Product specification
Low-voltage stabistor
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Limiting values
BAS17
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 31
5
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