BAS19, BAS20, BAS21
Small Signal Diodes
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
FEATURES
♦
Silicon Planar Epitaxial High-Speed
Diodes
Top View
.056 (1.43
)
.052 (1.33
)
♦
For switching and general purpose
applications.
♦
These diodes are also available in other case styles includ-
ing: the SOD-123 case with the type designation BAV19W -
BAV21W, the MiniMELF case with the type designation
BAV101 - BAV103, and the DO-35 case with the type desig-
nation BAV19 - BAV21.
1
2
max. .004 (0.1)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
MECHANICAL DATA
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
Dimensions in inches and (millimeters)
3
Top View
1
2
Marking
BAS19 = A8
BAS20 = A81
BAS21 = A82
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Continuous Reverse Voltage
BAS19
BAS20
BAS21
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
Non-Repetitive Peak Forward Current
at t = 1
µs
at t = 1 s
Average Rectified Forward Current
(averaged over any 20 ms period)
Forward DC Current at T
amb
= 25 °C
Repetitive Peak Forward Current
Power Dissipation up to T
amb
= 25 °C
Junction Temperature
Storage Temperature Range
1)
2)
Value
100
150
200
120
200
250
2.5
0.5
200
1)
200
2)
625
200
2)
150
– 65 to +150
Unit
V
V
V
V
V
V
A
A
mA
mA
mA
mW
°C
°C
V
R
V
R
V
R
V
RRM
V
RRM
V
RRM
I
FSM
I
FSM
I
F(AV)
I
F
I
FRM
P
tot
T
j
T
S
Measured under pulse conditions; Pulse time = tp
≤
0.3 ms.
Device on fiberglass substrate, see layout.
4/98
BAS19, BAS20, BAS21
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Forward Voltage
at I
F
= 100 mA
at I
F
= 200 mA
Leakage Current
at V
R
= V
Rmax
at V
R
= V
Rmax
; T
j
= 150 °C
Dynamic Forward Resistance
at I
F
= 10 mA
Capacitance
at V
R
= 0, f = 1 MHz
Reverse Recovery Time (see figures)
from I
F
= 30 mA through I
R
= 30 mA to I
R
= 3 mA,
R
L
= 100
Ω
Thermal Resistance Junction to Ambient Air
2)
Min.
–
–
–
–
–
–
–
Typ.
–
–
–
–
5
–
–
Max.
1.0
1.25
100
100
–
5
50
Unit
V
V
nA
µA
Ω
pF
ns
V
F
V
F
I
R
I
R
r
f
C
tot
t
rr
R
thJA
–
–
430
2)
K/W
Device on fiberglass substrate, see layout.
.30 (7.5)
.12 (3)
.04 (1) .08 (2)
.04 (1)
.08 (2)
.59 (15)
.47 (12)
.03 (0.8)
0.2 (5)
.06 (1.5)
.20 (5.1)
Dimensions in inches (millimeters)
Layout for R
thJA
test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
Test Circuit and Waveforms BAS19, BAS20, BAS21
Test circuit
Waveforms; I
R
= 3 mA
Input Signal
– total pulse duration
– duty factor
– rise time of reverse pulse
– reverse pulse duration
Oscilloscope
– rise time
– circuit capacitance*
t
p(tot)
= 2
µs
δ
= 0.0025
t
r
= 0.6 ns
t
p
= 100 ns
t
r
= 0.35 ns
C < 1 pF
*C = oscilloscope input capacitance + parasitic capacitance
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