BAS20-T3 datasheet, PDF - EEWORLD Datasheet

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BAS20-T3: Description0.2 A, 100 V, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size42KB，3 Pages; ManufacturerWon-Top Electronics Co., Ltd.; Websitehttps://www.wontop.com/

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BAS20-T3 Overview

0.2 A, 100 V, SILICON, SIGNAL DIODE

BAS20-T3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Won-Top Electronics Co., Ltd.
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-609 code	e0
Maximum non-repetitive peak forward current	2.5 A
Number of components	1
Maximum operating temperature	150 °C
Maximum output current	0.2 A
Maximum repetitive peak reverse voltage	150 V
Maximum reverse recovery time	0.05 µs
surface mount	YES
technology	SCHOTTKY
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

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WTE

POWER SEMICONDUCTORS

BAS19 – BAS21

SURFACE MOUNT FAST SWITCHING DIODE

Features

High Conductance

Fast Switching

Surface Mount Package Ideally Suited for

Automatic Insertion

For General Purpose and Switching

Plastic Material – UL Recognition Flammability

Classification 94V-O

TOP VIEW

Dim

SOT-23

Min

0.37

1.19

2.10

0.89

0.45

1.78

2.65

0.013

0.89

0.45

0.076

Max

0.51

1.40

2.50

1.05

0.61

2.05

3.05

0.15

1.10

0.61

0.178

Mechanical Data

Case: SOT-23, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 0.008 grams (approx.)

Mounting Position: Any

Marking: BAS19 A8

BAS20 A80

BAS21 A82

TOP VIEW

All Dimensions in mm

Maximum Ratings

=25°C unless otherwise specified

Characteristic

Non-Repetitive Peak Reverse Voltage

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Forward Continuous Current (Note 1)

Average Rectified Output Current (Note 1)

Peak Forward Surge Current (Note 1)

Power Dissipation (Note 1)

Typical Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

@ t = 1.0µs

Symbol

RRM

RWM

FSM

, T

STG

BAS19

120

100

BAS20

200

150

400

200

2.5

350

500

-65 to +150

BAS21

250

200

Unit

K/W

°C

Electrical Characteristics

=25°C unless otherwise specified

Characteristic

Forward Voltage

Reverse Leakage Current

Junction Capacitance

Reverse Recovery Time

Symbol

Min

—

Max

1.0

1.25

100

5.0

Unit

Test Condition

@ I

= 100mA

@ I

= 200mA

@ Rated DC Blocking Voltage

= 0V, f = 1.0MHz

= I

= 30mA,

= 0.1 x I

, R

= 100

Note: 1. Device mounted on fiberglass substrate 40 x 40 x 1.5mm.

BAS19 – BAS21

1 of 3

BAS20-T3 Related Products

	BAS20-T3	BAS19-T3	BAS21-T3
Description	0.2 A, 100 V, SILICON, SIGNAL DIODE	0.2 A, 100 V, SILICON, SIGNAL DIODE	0.2 A, 100 V, SILICON, SIGNAL DIODE
Is it Rohs certified?	incompatible	incompatible	incompatible
Reach Compliance Code	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V
JESD-609 code	e0	e0	e0
Maximum non-repetitive peak forward current	2.5 A	2.5 A	2.5 A
Number of components	1	1	1
Maximum operating temperature	150 °C	150 °C	150 °C
Maximum output current	0.2 A	0.2 A	0.2 A
Maximum repetitive peak reverse voltage	150 V	100 V	200 V
Maximum reverse recovery time	0.05 µs	0.05 µs	0.05 µs
surface mount	YES	YES	YES
technology	SCHOTTKY	SCHOTTKY	SCHOTTKY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Base Number Matches	1	1	1
Maker	Won-Top Electronics Co., Ltd.	Won-Top Electronics Co., Ltd.	-

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