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BAS20W-T3

Description
0.2 A, 100 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size43KB,3 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric Compare View All

BAS20W-T3 Overview

0.2 A, 100 V, SILICON, SIGNAL DIODE

BAS20W-T3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWon-Top Electronics Co., Ltd.
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-609 codee0
Maximum non-repetitive peak forward current2.5 A
Number of components1
Maximum operating temperature150 °C
Maximum output current0.2 A
Maximum repetitive peak reverse voltage150 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
WTE
POWER SEMICONDUCTORS
BAS19W – BAS21W
SURFACE MOUNT FAST SWITCHING DIODE
Features
!
!
!
High Conductance
A
L
Fast Switching
Surface Mount Package Ideally Suited for
Automatic Insertion
!
For General Purpose and Switching
B
!
Plastic Material – UL Recognition Flammability
Classification 94V-O

TOP VIEW
C
M
E
H
D
Dim
A
B
C
D
E
G
H
J
K
L
M
SOT-323
Min
Max
0.30
0.40
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.20
1.40
1.80
2.20
0.10
0.90
1.10
0.25
0.05
0.15
Mechanical Data
!
!
!
!
!
!
Case: SOT-323, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.006 grams (approx.)
Mounting Position: Any
Marking: BAS19W
A8
BAS20W
A80
BAS21W
A82
K
J
G
TOP VIEW
All Dimensions in mm
Maximum Ratings
@T
A
=25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Peak Forward Surge Current (Note 1)
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t = 1.0µs
Symbol
V
RM
V
RRM
V
RWM
V
R
I
F
I
O
I
FSM
P
d
R
JA
T
j
, T
STG
BAS19W
120
100
BAS20W
200
150
400
200
2.5
200
625
-65 to +150
BAS21W
250
200
Unit
V
V
mA
mA
A
mW
K/W
°C
Electrical Characteristics
@T
A
=25°C unless otherwise specified
Characteristic
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
Symbol
V
F
I
R
C
j
t
rr
Min
Max
1.0
1.25
100
5.0
50
Unit
V
nA
pF
nS
Test Condition
@ I
F
= 100mA
@ I
F
= 200mA
@ Rated DC Blocking Voltage
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 30mA,
I
RR
= 0.1 x I
R
, R
L
= 100
Note: 1. Device mounted on fiberglass substrate 40 x 40 x 1.5mm.
BAS19W – BAS21W
1 of 3
© 2002 Won-Top Electronics

BAS20W-T3 Related Products

BAS20W-T3 BAS19W-T3 BAS21W-T3
Description 0.2 A, 100 V, SILICON, SIGNAL DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE RECTIFIER DIODE,200V V(RRM),SOT-323
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code unknow compli unknow
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V
JESD-609 code e0 e0 e0
Maximum non-repetitive peak forward current 2.5 A 2.5 A 2.5 A
Number of components 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 0.2 A 0.2 A 0.2 A
Maximum repetitive peak reverse voltage 150 V 100 V 200 V
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maker Won-Top Electronics Co., Ltd. - Won-Top Electronics Co., Ltd.

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