R
1N5711, 1N6263
SMALL SIGNAL SCHOTTKY DIODES
DO-35
S E M I C O N D U C T O R
FEATURES
For general purpose applications
Metal-on-silicon junction Schottky barrier device which is protected by a
PN junction guard ring. The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steering, biasing and
coupling diodes for fast switching and low logic level applications
These diodes are also available in the MinMELF case with type
designation LL5711 and LL6263.
High temperature soldering guaranteed
:
260
°
C
/
10 seconds at terminals
Component in accordance to RoHS 2011
/
65
/
EU
0.079(2.0)
MAX
DIA
1.083(27.5)
MIN
0.150(3.8)
MAX
MECHANICAL DATA
1.083(27.5)
MIN
Case: DO-35 glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
0.020(0.52)
MAX
DIA
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Peak Reverse Voltage
Power Dissipation (infinite Heat Sink)
Forward Continuous Current
Maximum Single cycle surge 10ms square wave
Junction Temperature
Storage Temperature Range
T
A
=25
°
C
1N5711
1N6263
Dimensions in inches and (millimeters)
Value
70
60
400
15
2.0
150
-55 to+150
1)
Units
V
V
mW
mA
A
°C
°C
V
RRM
V
RRM
P
tot
IF
I
FSM
T
J
T
STG
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25
°
C ambient temperature unless otherwise specified)
Symbols
Reverse breakover voltage
at I
R
=10mA
Leakage current at V
R
=50V
Forward voltage drop at I
F
=1mA
I
F
=15mA
Junction Capacitance at V
R
=0V ,f=1MHz
Reverse Recovery time at I
F
=I
R
=5mA,recover to 0.1
I
R
Thermal resistance
1N5711
1N6263
Min.
70
60
Typ.
Max.
Unis
V
V
V
R
V
R
I
R
V
F
V
F
C
J
t
rr
200
0.41
1.0
2.0
1
400
nA
V
V
pF
ns
°C/W
R
θ
JA
JINAN JINGHENG ELECTRONICS CO., LTD.
2-5
HTTP
://
WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTICS CURVES 1N5711 AND 1N6263
Fig.1 Typical variation of fwd. current vs forward. voltage for
primary conduction through the Schottky barrier
mA
10
Fig.2 Typical forward conduction curve of combination
Schottky barrier and PN junction guard ring
mA
100
5
2
1
80
60
5
I
F
2
0.1
I
F
40
5
20
2
0.01
0
0.5
1V
0
0
0.5
1V
V
F
Fig.3 Typical variation of reverse current at
various temperatures
μA
V
F
Fig.4 Typical capacitance curve as a function of
reverse voltage
pF
150 C
125 C
100
5
2
10
5
2
1
2
T
J=25
°
C
100 C
75 C
I
R
50 C
1
5
2
C
J
0.1
5
2
25 C
0.01
0
0
10
20
30
40
50V
0
10
20
30
40
50V
V
R
V
R
JINAN JINGHENG ELECTRONICS CO., LTD.
2-6
HTTP
://
WWW.JINGHENGGROUP.COM
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