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BAS40

Description
0.2 A, 40 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size49KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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BAS40 Overview

0.2 A, 40 V, SILICON, SIGNAL DIODE

BAS40 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionGREEN, PLASTIC PACKAGE-3
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.2000 W
Diode typeSignal diode
Maximum reverse recovery time0.0050 us
Maximum repetitive peak reverse voltage40 V
Maximum average forward current0.2000 A
BAS40 THRU BAS40-06
Schottky Diodes
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
FEATURES
These diodes feature very low turn-on
Top View
.056 (1.43
)
.052 (1.33
)
voltage and fast switching.
These devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges.
1
2
max. .004 (0.1)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
MECHANICAL DATA
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
Dimensions in inches and (millimeters)
3
3
Top View
1
2
1
2
BAS40
Marking: 43
3
BAS40-04
Marking: 44
3
Top View
1
2
1
2
BAS40-05
Marking: 45
BAS40-06
Marking: 46
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR ONE DIODE
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Repetitive Peak Reverse Voltage
Forward Continuous Current at T
amb
= 25 °C
Surge Forward Current at t
p
< 1 s, T
amb
= 25 °C
Power Dissipation
1)
at T
amb
= 25 °C
Junction Temperature
Storage Temperature Range
1)
Value
40
200
1)
600
1)
200
1)
150
–55 to +150
Unit
V
mA
mA
mW
°C
°C
V
RRM
I
F
I
FSM
P
tot
T
j
T
S
Device on fiberglass substrate, see layout
4/98

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Number of terminals 3 - - 3 3 3 3 3 3
Number of components 1 - - 2 2 1 2 2 2
Processing package description GREEN, PLASTIC PACKAGE-3 - - GREEN, PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 ROHS COMPLIANT, PLASTIC PACKAGE-3 Surface mount, 3 PIN ROHS COMPLIANT, PLASTIC PACKAGE-3 SOT-23, 3 PIN
state DISCONTINUED - - ACTIVE ACTIVE ACTIVE DISCONTINUED ACTIVE DISCONTINUED
packaging shape Rectangle - - RECTANGULAR Rectangle Rectangle Rectangle Rectangle Rectangle
Package Size SMALL OUTLINE - - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes - - Yes Yes Yes Yes Yes Yes
Terminal form GULL WING - - GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location pair - - DUAL pair pair pair pair pair
Packaging Materials Plastic/Epoxy - - PLASTIC/EPOXY Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
Craftsmanship SCHOTTKY - - SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
structure single - - COMMON CATHODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS single COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS 系列 CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials silicon - - SILICON silicon silicon silicon silicon silicon
Maximum power consumption limit 0.2000 W - - 0.2000 W - 0.2250 W 0.2500 W 0.2250 W 0.2000 W
Diode type Signal diode - - SIGNAL DIODE Signal diode Signal diode Signal diode Signal diode Signal diode
Maximum repetitive peak reverse voltage 40 V - - 40 V 40 V 30 V - 30 V 30 V
Maximum average forward current 0.2000 A - - 0.2000 A 0.1200 A 0.2000 A 0.3000 A 0.2000 A 0.2000 A
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